FQU3P20TU Fairchild Semiconductor, FQU3P20TU Datasheet - Page 7

MOSFET P-CH 200V 2.4A IPAK

FQU3P20TU

Manufacturer Part Number
FQU3P20TU
Description
MOSFET P-CH 200V 2.4A IPAK
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheets

Specifications of FQU3P20TU

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
2.7 Ohm @ 1.2A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
2.4A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
8nC @ 10V
Input Capacitance (ciss) @ Vds
250pF @ 25V
Power - Max
2.5W
Mounting Type
Through Hole
Package / Case
IPak, TO-251, DPak, VPak (3 straight leads + tab)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
©2000 Fairchild Semiconductor International
Package Dimensions
MAX0.96
[2.30 0.20]
2.30TYP
(0.50)
6.60
5.34
(4.34)
0.20
0.30
[2.30 0.20]
2.30TYP
0.76
(0.50)
DPAK
0.10
(2XR0.25)
6.60
(5.34)
(5.04)
(1.50)
0.20
0.76
2.30
0.50
1.02
2.30
0.50
0.10
0.10
0.10
0.20
0.20
0.10
Rev. A, April 2000

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