FDFMA2P857 Fairchild Semiconductor, FDFMA2P857 Datasheet

MOSFET P-CH 20V 3A MICROFET2X2

FDFMA2P857

Manufacturer Part Number
FDFMA2P857
Description
MOSFET P-CH 20V 3A MICROFET2X2
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDFMA2P857

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Diode (Isolated)
Rds On (max) @ Id, Vgs
120 mOhm @ 3A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
3A
Vgs(th) (max) @ Id
1.3V @ 250µA
Gate Charge (qg) @ Vgs
6nC @ 4.5V
Input Capacitance (ciss) @ Vds
435pF @ 10V
Power - Max
700mW
Mounting Type
Surface Mount
Package / Case
6-MLP, 6-MicroFET™
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDFMA2P857TR
©2008 Fairchild Semiconductor Corporation
FDFMA2P857 Rev.B1
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
FDFMA2P857
Integrated P-Channel PowerTrench
–20V, –3.0A, 120mΩ
Features
MOSFET
Schottky:
V
V
I
P
T
V
I
R
R
R
R
D
O
J
DSS
GSS
D
RRM
θJA
θJA
θJA
θJA
, T
Max r
Max r
Max r
V
Low profile - 0.8 mm maximum - in the new pack-
age MicroFET 2x2 mm
RoHS Compliant
F
Symbol
Device Marking
STG
< 0.54V @ 1A
DS(on)
DS(on)
DS(on)
.857
:
= 120mΩ at V
= 160mΩ at V
= 240mΩ at V
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Schottky Repetitive Peak Reverse Voltage
Schottky Average Forward Current
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
MicroFET 2x2
GS
GS
GS
FDFMA2P857
= –4.5V, I
= –2.5V, I
= –1.8V, I
-Pulsed
Device
D
D
D
Pin 1
= –3.0A
= –2.5A
= –1.0A
T
C
A
= 25°C unless otherwise noted
A
Parameter
G
MicroFET 2x2
NC
Package
S
1
D
®
General Description
This device is designed specifically as a single package solution
for the battery charge switch in cellular handset and other ultra-
portable applications. It features a MOSFET with low on-state
resistance and an independently connected low forward voltage
schottky diode for minimum conduction losses.
The MicroFET 2x2 package offers exceptional thermal
performance for it’s physical size and is well suited to linear
mode applications.
MOSFET and Schottky Diode
Reel Size
7’’
NC
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1b)
(Note 1c)
(Note 1d)
A
D
2
3
1
Tape Width
8mm
–55 to +150
Ratings
173
140
1.4
0.7
86
20
±8
–3
–6
30
86
1
March 2008
www.fairchildsemi.com
4
5
6
3000 units
Quantity
S
C
G
Units
°C/W
°C
W
V
V
A
V
A

Related parts for FDFMA2P857

FDFMA2P857 Summary of contents

Page 1

... Package Marking and Ordering Information Device Marking Device .857 FDFMA2P857 ©2008 Fairchild Semiconductor Corporation FDFMA2P857 Rev.B1 ® MOSFET and Schottky Diode General Description This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra- = – ...

Page 2

... Source to Drain Diode Forward Voltage SD t Reverse Recovery Time rr Q Reverse Recovery Charge rr Schottky Diode Characteristics I Reverse Leakage R I Reverse Leakage R V Forward Voltage F V Forward Voltage F FDFMA2P857 Rev. 25°C unless otherwise noted J Test Conditions I = –250μ –250μA, referenced to 25° –16V ±8V ...

Page 3

... C/W when mounted 1in pad copper. 2: Pulse Test: Pulse Width < 300μs, Duty cycle < 2.0%. FDFMA2P857 Rev. 25°C unless otherwise noted A 2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material pad copper, 1.5” x 1.5” x 0.062” thick PCB. ...

Page 4

... T , JUNCTION TEMPERATURE J Figure 3. Normalized On- Resistance vs Junction Temperature - 125 0.0 0.5 1 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics FDFMA2P857 Rev. 25°C unless otherwise noted A -2V -1.8V -1.5V 1.5 2.0 2.5 0.28 0.22 0.16 0.10 0.04 75 100 125 150 0.01 o -55 C 0.001 ...

Page 5

... Figure 9. Forward Bias Safe Operating Area 125 C J 0.1 0.01 0.001 0 100 200 300 V FORWARD VOLTAGE(mV) F, Figure 11. Schottky Diode Forward Current FDFMA2P857 Rev. 25°C unless otherwise noted A 700 600 500 -15V 400 300 -10V 200 100 200 100 100us 1ms 10 10ms ...

Page 6

... Typical Characteristics 1 1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.1 0.01 0. FDFMA2P857 Rev. 25°C unless otherwise noted A SINGLE PULSE 173 C/W θ RECTANGULAR PULSE DURATION (s) Figure 13. Transient Thermal Response Curve NOTES: DUTY FACTOR PEAK θJA θ www.fairchildsemi.com ...

Page 7

... Dimensional Outline and Pad Layout rev3 FDFMA2P857 Rev.B1 7 www.fairchildsemi.com ...

Page 8

... Definition of Terms Datasheet Identification Product Status Advance Information Formative or In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDFMA2P857 Rev.B1 FPS™ PDP-SPM™ F-PFS™ Power-SPM™ ® FRFET PowerTrench Global Power Resource SM Programmable Active Droop™ ...

Related keywords