FDFMA2P857 Fairchild Semiconductor, FDFMA2P857 Datasheet - Page 4

• Manufacturer Part Number: FDFMA2P857
• Description: MOSFET P-CH 20V 3A MICROFET2X2
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDFMA2P857

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 120 mOhm @ 3A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3A
• Vgs(th) (max) @ Id: 1.3V @ 250µA
• Gate Charge (qg) @ Vgs: 6nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 435pF @ 10V
• Power - Max: 700mW
• Mounting Type: Surface Mount
• Package / Case: 6-MLP, 6-MicroFET™
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDFMA2P857TR

FDFMA2P857 Rev.B1
Typical Characteristics
1.4
1.3
1.2
1.1
1.0
0.9
0.8
Figure 3. Normalized On- Resistance
-50
Figure 1.
6
5
4
3
2
1
0
6
5
4
3
2
1
0
0.0
0.0
Figure 5. Transfer Characteristics
V
-3.5V
GS
V
-25
V
I
D
GS
=-4.5V
vs Junction Temperature
DS
-V DS , DRAIN TO SOURCE VOLTAGE (V)
=-3A
T
-V
= -4.5V
= -5V
J
0.5
0.5
, JUNCTION TEMPERATURE
GS
On-Region Characteristics
0
, GATE TO SOURCE VOLTAGE (V)
-3V
25
T
1.0
1.0
-2.5V
A
= 125
50
o
C
T
1.5
A
1.5
75
= 25°C unless otherwise noted
-1.8V
-55
-1.5V
25
-2V
100
o
(
o
C
C
o
2.0
2.0
C
)
125
150
2.5
2.5
4
0.0001
0.001
0.28
0.22
0.16
0.10
0.04
0.01
3.0
2.5
2.0
1.5
1.0
0.5
0.1
10
Figure 2.
Figure 4.
1
0.0
Forward Voltage vs Source Current
0
vs Drain Current and Gate Voltage
0
Figure 6.
V
GS
- V
-V
SD
= 0V
T
0.2
1
GS
T
A
, BODY DIODE FORWARD VOLTAGE (V)
V
A
Normalized On-Resistance
= 25
2
GS
-1.8V
On-Resistance vs Gate to
, GATE TO SOURCE VOLTAGE (V)
= 125
Source Voltage
Source to Drain Diode
=-1.5V
o
-I D , DRAIN CURRENT(A)
C
o
0.4
C
2
-2.0V
-2.5V
4
0.6
3
-55
-3.0V
T
A
o
25
= 125
C
6
o
C
0.8
4
o
C
-3.5V
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I
D
8
1.0
5
=-1.5A
-4.5V
1.2
10
6