FDT434P Fairchild Semiconductor, FDT434P Datasheet

FDT434P

Manufacturer Part Number

FDT434P

Description

MOSFET P-CH 20V 6A SOT-223

Manufacturer

Fairchild Semiconductor

Series

PowerTrench®r

Type

Power MOSFETr

Datasheets

1.FDT434P.pdf (5 pages)

2.FDT434P.pdf (5 pages)

Specifications of FDT434P

Fet Type

MOSFET P-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

50 mOhm @ 6A, 4.5V

Drain To Source Voltage (vdss)

20V

Current - Continuous Drain (id) @ 25° C

Vgs(th) (max) @ Id

1V @ 250µA

Gate Charge (qg) @ Vgs

19nC @ 4.5V

Input Capacitance (ciss) @ Vds

1187pF @ 10V

Power - Max

1.1W

Mounting Type

Surface Mount

Package / Case

SOT-223 (3 leads + Tab), SC-73, TO-261

Configuration

Single Dual Drain

Transistor Polarity

P-Channel

Resistance Drain-source Rds (on)

0.05 Ohm @ 4.5 V

Forward Transconductance Gfs (max / Min)

6.5 S

Drain-source Breakdown Voltage

20 V

Gate-source Breakdown Voltage

+/- 8 V

Continuous Drain Current

6 A

Power Dissipation

3000 mW

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Minimum Operating Temperature

- 55 C

Number Of Elements

Polarity

Channel Mode

Enhancement

Drain-source On-res

0.05Ohm

Drain-source On-volt

20V

Gate-source Voltage (max)

±8V

Drain Current (max)

Output Power (max)

Not RequiredW

Frequency (max)

Not RequiredMHz

Noise Figure

Not RequireddB

Power Gain

Not RequireddB

Drain Efficiency

Not Required%

Operating Temp Range

-55C to 150C

Operating Temperature Classification

Military

Mounting

Surface Mount

Pin Count

3 +Tab

Package Type

SOT-223

Continuous Drain Current Id

Drain Source Voltage Vds

-20V

On Resistance Rds(on)

40mohm

Rds(on) Test Voltage Vgs

-4.5V

Threshold Voltage Vgs Typ

-600mV

Transistor Case Style

SOT-223

Rohs Compliant

Yes

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

FDT434P

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

FDT434P

Manufacturer:

FSC

Quantity:

35 000

Company:

Meier Automation Equipment Co., Limited

Part Number:

FDT434P

Manufacturer:

FAIRCHILD/仙童

Quantity:

20 000

Current page: 1 of 5
Download datasheet (173Kb)

FDT434P

P-Channel 2.5V Specified PowerTrench

General Description

This P-Channel 2.5V specified MOSFET is produced

using

PowerTrench process that has been especially tailored

to minimize the on-state resistance and yet maintain

low gate charge for superior switching performance.

Applications

• Low Dropout Regulator

• DC/DC converter

• Load switch

• Motor driving

2000 Fairchild Semiconductor Corporation

Absolute Maximum Ratings

Symbol

Thermal Characteristics

Package Marking and Ordering Information

DSS

GSS

θJA

θJC

, T

Device Marking

stg

SOT-223

Fairchild

434

Drain-Source Voltage

Gate-Source Voltage

Drain Current

Power Dissipation for Single Operation

Operating and Storage Junction Temperature Range

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

Semiconductor’s

– Continuous

– Pulsed

FDT434P

Device

Parameter

advanced

=25

C unless otherwise noted

Reel Size

13’’

(Note 1a)

(Note 1b)

(Note 1a)

(Note 1c)

(Note 1)

   

Features

• –5.5 A, –20 V. R

• Low gate charge (13nC typical)

• High performance trench technology for extremely

• High power and current handling capability in a

MOSFET

low R

widely used surface mount package.

SOT-223

(J23Z)

DS(ON)

Tape width

DS(ON)

12mm

-55 to +150

Ratings

–20

–30

1.3

1.1

±8

–6

= 0.050 Ω @ V

= 0.070 Ω @ V

January 2000

FDT434P Rev. C1 (W)

2500 units

= –4.5 V

= –2.5 V.

Quantity

Units

°C/W

°C

Related parts for FDT434P

FDT434P Summary of contents

Page 1

... Reel Size 13’’ January 2000 = 0.050 Ω –4.5 V DS(ON 0.070 Ω –2.5 V. DS(ON Ratings Units – ±8 –6 A – 1.3 1.1 -55 to +150 °C 42 °C/W 12 °C/W Tape width Quantity 12mm 2500 units FDT434P Rev. C1 (W) ...

Page 2

... Min Typ Max Units –20 V –28 mV/°C –1 µA 100 nA –100 nA –0.4 –0.6 – mV/°C 0.040 0.050 Ω 0.050 0.070 0.067 0.083 –20 A 6.5 S 1187 pF 270 pF 114 1 –2.5 A –0.75 –1 110°/W when mounted on a minimum pad. FDT434P Rev. C1 (W) ...

Page 3

... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. = -2.5V -3.0V -3.5V -4.0V -4. DRAIN CURRENT ( =125°C A 25° GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125°C J 25°C -55°C 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDT434P Rev 1.4 ...

Page 4

... Figure 10. Single Pulse Maximum 0 TIME (sec 1MHz ISS C OSS C RSS DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE 110 C/W θ 0.01 0 100 1000 SINGLE PULSE TIME (SEC) Power Dissipation. R ( θJA θ 110 °C/W θJA P(pk (t) θ Duty Cycle 100 FDT434P Rev. C1 (W) 12 1000 ...

Page 5

CROSSVOLT â â â â Rev. H5 ...

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