FQPF3P20 Fairchild Semiconductor, FQPF3P20 Datasheet - Page 2
![MOSFET P-CH 200V 2.2A TO-220F](/photos/5/31/53149/mfg_to-220f_desc_sml.jpg)
FQPF3P20
Manufacturer Part Number
FQPF3P20
Description
MOSFET P-CH 200V 2.2A TO-220F
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet
1.FQPF3P20.pdf
(8 pages)
Specifications of FQPF3P20
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
2.7 Ohm @ 1.1A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
2.2A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
8nC @ 10V
Input Capacitance (ciss) @ Vds
250pF @ 25V
Power - Max
32W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FQPF3P20
Manufacturer:
FAIRCHILD
Quantity:
12 500
Part Number:
FQPF3P20
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
FQPF3P20
ELECTRICAL CHARACTERISTICS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Notes:
2
Symbol
Symbol
R
BV
V
BV/ T
t
t
Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
L=46.5mH, I
I
Pulse Test: Pulse Width
Essentially Independent of Operating Temperature
I
I
C
DS(on)
GS(th)
C
C
Q
V
d(on)
d(off)
Q
SD
I
GSS
DSS
Q
Q
g
SM
I
t
oss
t
t
SD
DSS
rss
iss
S
rr
fs
gs
gd
r
f
g
rr
J
2.8A, di/dt
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage, Forward
Gate-Source Leakage, Reverse
Drain-to-Source Leakage Current
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain (Miller) Charge
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
AS
= 2.2A, V
300A/ s, V
Characteristics
Characteristics
DD
300 s, Duty Cycle
= 50V, R
DD
BV
G
=25 , Starting T
DSS
, Starting T
(T
2%
C
= 25 C unless otherwise specified)
Min.
J
Min.
J
=25 C
200
3.0
=25 C
Typ.
0.34
100
Typ.
2.06
1.15
190
0.18
7.5
8.5
6.0
1.7
2.9
45
35
12
25
Max.
2.2
8.8
5.0
Max.
100
250
2.7
8.0
100
60
10
25
80
35
60
5.0
10
1
Units
ns
A
V
C
Units
V/ C
nA
nC
pF
ns
V
V
S
A
Integral reverse pn-diode
in the MOSFET
T
T
di
J
J
F
=25 C, I
=25 C, I
/dt=100A/ s
V
I
V
V
V
V
V
V
V
V
f=1MHz
See Fig 5
V
R
See Fig 13
V
I
See Fig 6 & Fig 12
D
D
GS
DS
GS
GS
DS
DS
GS
DS
GS
DD
DS
G
= 250 A,
= 2.8A
Test Conditions
=50
= 5V, I
= 200V
= 160V, T
= 40V, I
= 160V, V
=0V, I
= 30V
= 30V
= 10V, I
=0V, V
= 100V, I
Test Conditions
S
F
QFET P-CHANNEL
= 2.8A, V
= 2.2A, V
D
DS
D
= 250 A
D
= 250 A
D
= 25V
= 1.1A
= 1.1A
D
C
GS
= 2.8A
See Fig 7
=125 C
DD
= 10V
GS
= 160V
=0V