FQPF3P20 Fairchild Semiconductor, FQPF3P20 Datasheet - Page 2

• Manufacturer Part Number: FQPF3P20
• Description: MOSFET P-CH 200V 2.2A TO-220F
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQPF3P20

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.7 Ohm @ 1.1A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 2.2A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 8nC @ 10V
• Input Capacitance (ciss) @ Vds: 250pF @ 25V
• Power - Max: 32W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FQPF3P20
ELECTRICAL CHARACTERISTICS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Notes:
2
Symbol
Symbol
R
BV
V
BV/ T
t
t
Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
L=46.5mH, I
I
Pulse Test: Pulse Width
Essentially Independent of Operating Temperature
I
I
C
DS(on)
GS(th)
C
C
Q
V
d(on)
d(off)
Q
SD
I
GSS
DSS
Q
Q
g
SM
I
t
oss
t
t
SD
DSS
rss
iss
S
rr
fs
gs
gd
r
f
g
rr
J
2.8A, di/dt
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage, Forward
Gate-Source Leakage, Reverse
Drain-to-Source Leakage Current
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain (Miller) Charge
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
AS
= 2.2A, V
300A/ s, V
Characteristics
Characteristics
DD
300 s, Duty Cycle
= 50V, R
DD
BV
G
=25 , Starting T
DSS
, Starting T
(T
2%
C
= 25 C unless otherwise specified)
Min.
J
Min.
J
=25 C
200
3.0
=25 C
Typ.
0.34
100
Typ.
2.06
1.15
190
0.18
7.5
8.5
6.0
1.7
2.9
45
35
12
25
Max.
2.2
8.8
5.0
Max.
100
250
2.7
8.0
100
60
10
25
80
35
60
5.0
10
1
Units
ns
A
V
C
Units
V/ C
nA
nC
pF
ns
V
V
S
A
Integral reverse pn-diode
in the MOSFET
T
T
di
J
J
F
=25 C, I
=25 C, I
/dt=100A/ s
V
I
V
V
V
V
V
V
V
V
f=1MHz
See Fig 5
V
R
See Fig 13
V
I
See Fig 6 & Fig 12
D
D
GS
DS
GS
GS
DS
DS
GS
DS
GS
DD
DS
G
= 250 A,
= 2.8A
Test Conditions
=50
= 5V, I
= 200V
= 160V, T
= 40V, I
= 160V, V
=0V, I
= 30V
= 30V
= 10V, I
=0V, V
= 100V, I
Test Conditions
S
F
QFET P-CHANNEL
= 2.8A, V
= 2.2A, V
D
DS
D
= 250 A
D
= 250 A
D
= 25V
= 1.1A
= 1.1A
D
C
GS
= 2.8A
See Fig 7
=125 C
DD
= 10V
GS
= 160V
=0V