FQPF3P20 Fairchild Semiconductor, FQPF3P20 Datasheet - Page 4

• Manufacturer Part Number: FQPF3P20
• Description: MOSFET P-CH 200V 2.2A TO-220F
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQPF3P20

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.7 Ohm @ 1.1A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 2.2A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 8nC @ 10V
• Input Capacitance (ciss) @ Vds: 250pF @ 25V
• Power - Max: 32W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FQPF3P20
4
1.2
1.1
1.0
0.9
0.8
10
10
10
10
-100
-1
-2
1
0
10
0
Fig 7. Breakdown Voltage vs. Temperature
-50
Fig 9. Max. Safe Operating Area
T
-V
J
, Junction Temperature [
DS
1 0
1 0
Operation in This Area
is Limited by R
1 0
0
, Drain-Source Voltage [V]
¡Ø Notes :
-1
-2
10
0
1 0
1. T
2. T
3. Single Pulse
1
-5
C
J
= 150
= 25
0 . 0 5
0 . 0 1
0 . 0 2
D = 0 .5
0 . 2
0 . 1
o
DS(on)
C
o
50
C
DC
100 ms
1 0
-4
100
s in g le p u ls e
10 ms
t
o
C]
1
, S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
10
¡Ø Note :
1. V
2. I
2
1 ms
D
GS
= -250 ¥ìA
150
= 0 V
1 0
Fig 11. Thermal Response
-3
200
1 0
-2
Fig 10. Max. Drain Current vs. Case Temperature
2.5
2.0
1.5
1.0
0.5
0.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
25
1 0
¡ Ø N o te s :
P
P
1 . Z
2 . D u t y F a c t o r , D = t
3 . T
DM
DM
-1
Fig 8. On-Resistance vs. Temperature
¥ è J C
J M
-50
- T
( t ) = 3 . 9 ¡ É / W M a x .
50
C
t
t
t
= P
1
1
1
t
t
t
T
2
2
2
D M
1 0
J
, Junction Temperature [
T
* Z
0
C
0
, Case Temperature [¡É]
1
¥ è J C
/t
2
75
( t )
50
1 0
1
100
QFET P-CHANNEL
100
[ C]
o
C]
¡Ø Note :
125
1. V
2. I
150
D
GS
= -1.4 A
= -10 V
200
150