FDS6690AS Fairchild Semiconductor, FDS6690AS Datasheet - Page 2

• Manufacturer Part Number: FDS6690AS
• Description: MOSFET N-CH 30V 10A 8SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r
• Type: Power MOSFETr

Specifications of FDS6690AS

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 12 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 3V @ 1mA
• Gate Charge (qg) @ Vgs: 23nC @ 10V
• Input Capacitance (ciss) @ Vds: 910pF @ 15V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.012 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 45 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 10 A
• Power Dissipation: 2500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.012Ohm
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±20V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SOIC N
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
R
Switching Characteristics
Symbol
BV
∆BV
I
I
V
∆V
R
I
g
C
C
C
DSS
GSS
D(on)
t
t
t
t
t
t
t
t
Q
Q
Q
Q
FS
d(on)
r
d(off)
f
d(on)
r
d(off)
f
GS(th)
G
∆T
∆T
DS(on)
iss
oss
rss
g
g
gs
gd
GS(th)
DSS
(TOT)
DSS
J
J
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge at Vgs=10V
Total Gate Charge at Vgs=5V
Gate–Source Charge
Gate–Drain Charge
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current
Forward Transconductance
Parameter
(Note 2)
(Note 2)
T
V
f = 1.0 MHz
V
V
V
V
V
V
V
I
V
V
V
I
V
V
V
V
V
D
D
A
DS
GS
DS
GS
DS
GS
DD
GS
DS
GS
DS
GS
GS
GS
GS
DS
= 25°C unless otherwise noted
= 10 mA, Referenced to 25°C
= 10 mA, Referenced to 25°C
=10 V, I
= 15 V,
= 15 mV,
= 15 V,
= 10 V,
= 15 V,
= 4.5 V,
= 15 V,
= 0 V, I
= 24 V,
= ±20 V,
= V
= 10 V,
= 4.5 V,
= 10 V,
= 15 V,
Test Conditions
GS
, I
D
D
D
= 1 mA
=10A, T
= 1 mA
I
D
V
= 10 A
V
V
I
I
GS
f = 1.0 MHz
I
R
I
R
D
D
V
I
DS
D
D
D
GS
DS
GEN
GEN
= 10 A
= 8.5 A
= 1 A,
= 1 A,
= 0 V
= 10 A
= 0 V
J
= 0 V,
= 5 V
=125°C
= 6 Ω
= 6 Ω
Min
30
50
1
Typ
30
910
270
100
2.0
2.3
3.0
1.6
25
11
11
15
16
–4
10
12
15
45
8
5
6
8
9
Max
±100
500
16
10
40
12
20
20
27
16
23
13
12
15
19
3
FDS6690AS Rev A2 (X)
mV/°C
Units
mV/°C
mΩ
nC
nC
nC
nC
µA
nA
pF
pF
pF
ns
ns
ns
ns
ns
ns
ns
ns
Ω
V
V
A
S