FDS6690AS Fairchild Semiconductor, FDS6690AS Datasheet - Page 3

• Manufacturer Part Number: FDS6690AS
• Description: MOSFET N-CH 30V 10A 8SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r
• Type: Power MOSFETr

Specifications of FDS6690AS

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 12 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 3V @ 1mA
• Gate Charge (qg) @ Vgs: 23nC @ 10V
• Input Capacitance (ciss) @ Vds: 910pF @ 15V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.012 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 45 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 10 A
• Power Dissipation: 2500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.012Ohm
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±20V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SOIC N
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
Notes:
1. R
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
3. See “SyncFET Schottky body diode characteristics” below.
Electrical Characteristics
I
V
T
Q
S
drain pins. R
rr
SD
rr
θJA
Drain–Source Diode Characteristics and Maximum Ratings
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the
θJC
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
is guaranteed by design while R
a) 50°/W when
Parameter
mounted on a 1 in
pad of 2 oz copper
θCA
2
is determined by the user's board design.
TA = 25°C unless otherwise noted
V
I
d
F
iF
GS
= 10A,
/d
= 0 V,
t
b) 105°/W when
= 300 A/µs
Test Conditions
mounted on a .04 in
pad of 2 oz copper
I
S
= 3.5 A
2
(Note 2)
(Note 3)
Min
c) 125°/W when mounted on a
minimum pad.
Typ
0.6
16
9
Max
3.5
0.7
FDS6690AS Rev A2 (X)
Units
nS
nC
A
V