FQD4P25TM_WS Fairchild Semiconductor, FQD4P25TM_WS Datasheet - Page 3

• Manufacturer Part Number: FQD4P25TM_WS
• Description: MOSFET P-CH 250V 3.1A DPAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQD4P25TM_WS

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.1 Ohm @ 1.55A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 3.1A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 14nC @ 10V
• Input Capacitance (ciss) @ Vds: 420pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 2.1 Ohms
• Drain-source Breakdown Voltage: - 250 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 3.1 A
• Power Dissipation: 45 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2000 Fairchild Semiconductor International
Typical Characteristics
700
600
500
400
300
200
100
10
10
10
10
-1
-2
8
6
4
2
0
0
1
0
10
10
0
Figure 5. Capacitance Characteristics
-1
-1
Top :
Bottom : -5.5 V
Figure 3. On-Resistance Variation vs.
Figure 1. On-Region Characteristics
Drain Current and Gate Voltage
-15.0 V
-10.0 V
-8.0 V
-7.0 V
-6.5 V
-6.0 V
V
GS
3
-V
-V
DS
DS
, Drain-Source Voltage [V]
-I
, Drain-Source Voltage [V]
10
D
10
, Drain Current [A]
0
0
V
GS
6
V
GS
= - 20V
= - 10V
C
C
C
rss
iss
oss
C
C
C
iss
oss
rss
※ Notes :
= C
= C
= C
1. 250μ s Pulse Test
2. T
10
10
※ Note : T
9
gs
gd
1
ds
1
C
+ C
+ C
= 25℃
gd
gd
(C
※ Notes :
J
ds
1. V
2. f = 1 MHz
= 25℃
= shorted)
GS
= 0 V
12
10
10
10
10
10
10
12
10
8
6
4
2
0
-1
1
0
-1
1
0
0.0
2
0
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
Figure 2. Transfer Characteristics
Variation vs. Source Current
0.5
2
25℃
150℃
150℃
4
-V
-V
Q
GS
SD
and Temperature
G
1.0
4
, Gate-Source Voltage [V]
, Source-Drain Voltage [V]
, Total Gate Charge [nC]
25℃
V
DS
V
DS
V
= -200V
DS
= -125V
-55℃
1.5
= -50V
6
6
2.0
8
※ Notes :
※ Notes :
1. V
2. 250μ s Pulse Test
1. V
2. 250μ s Pulse Test
※ Note : I
8
DS
GS
= -50V
= 0V
2.5
10
D
= -4.0 A
Rev. A2, December 2000
3.0
10
12