FQD4P25TM_WS Fairchild Semiconductor, FQD4P25TM_WS Datasheet - Page 4
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FQD4P25TM_WS
Manufacturer Part Number
FQD4P25TM_WS
Description
MOSFET P-CH 250V 3.1A DPAK
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet
1.FQU4P25TU.pdf
(9 pages)
Specifications of FQD4P25TM_WS
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
2.1 Ohm @ 1.55A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
3.1A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
14nC @ 10V
Input Capacitance (ciss) @ Vds
420pF @ 25V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
2.1 Ohms
Drain-source Breakdown Voltage
- 250 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
3.1 A
Power Dissipation
45 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FQD4P25TM_WSFQD4P25TM-WS
Manufacturer:
ON/安森美
Quantity:
20 000
©2000 Fairchild Semiconductor International
Typical Characteristics
10
1.2
1.1
1.0
0.9
0.8
10
10
Figure 9. Maximum Safe Operating Area
-100
-1
1
0
10
Figure 7. Breakdown Voltage Variation
0
-50
T
-V
vs. Temperature
J
, Junction Temperature [
DS
0
, Drain-Source Voltage [V]
1 0
※ Notes :
1 0
Operation in This Area
is Limited by R
10
1. T
2. T
3. Single Pulse
1
- 1
1 0
0
C
J
= 150
= 25
- 5
0 .0 1
D = 0 . 5
0 .0 2
o
0 .0 5
C
0 .2
o
0 .1
50
C
DS(on)
DC
Figure 11. Transient Thermal Response Curve
10 ms
100
1 0
(Continued)
o
- 4
C]
s in g le p u ls e
1 ms
10
※ Note :
1. V
2. I
t
2
1
100 s
, S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
D
GS
= -250 μ A
150
= 0 V
1 0
- 3
200
1 0
- 2
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
25
※ N o te s :
Figure 8. On-Resistance Variation
Figure 10. Maximum Drain Current
1 0
1 . Z
2 . D u ty F a c t o r , D = t
3 . T
- 1
P
θ J C
J M
-50
DM
- T
50
( t ) = 2 . 7 8 ℃ /W M a x .
C
vs. Case Temperature
= P
T
vs. Temperature
T
J
t
, Junction Temperature [
D M
1
C
t
0
, Case Temperature [ ℃ ]
1 0
2
* Z
0
75
1
/t
θ J C
2
( t )
50
100
1 0
1
100
o
C]
※ Notes :
125
1. V
2. I
150
D
GS
= -2.0 A
= -10 V
Rev. A2, December 2000
200
150