IRL630A Fairchild Semiconductor, IRL630A Datasheet - Page 2

• Manufacturer Part Number: IRL630A
• Description: MOSFET N-CH 200V 9A TO-220
• Manufacturer: Fairchild Semiconductor

Specifications of IRL630A

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 400 mOhm @ 4.5A, 5V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 9A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 27nC @ 5V
• Input Capacitance (ciss) @ Vds: 755pF @ 25V
• Power - Max: 69W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRL630A
Symbol
Electrical Characteristics
Source-Drain Diode Ratings and Characteristics
Symbol
Notes;
(1) Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
(2) L=1mH, I
(3) I
(4) Pulse Test: Pulse Width = 250 s, Duty Cycle
(5) Essentially Independent of Operating Temperature
BV/ T
R
BV
V
t
t
V
C
I
I
C
GS(th)
C
Q
Q
I
Q
DS(on)
d(on)
d(off)
GSS
DSS
g
Q
I
SM
t
t
S
SD
rr
t
oss
DSS
iss
rss
SD
fs
r
f
gs
gd
rr
g
J
9A, di/dt
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Drain-to-Source Leakage Current
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain ( Miller ) Charge
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
AS
=9A, V
220A/ s, V
DD
Characteristic
Characteristic
=50V, R
DD
G
=27 , Starting T
BV
DSS
(T
, Starting T
C
=25 C unless otherwise specified)
(1)
(4)
J
=25 C
2%
J
=25 C
Min.
Min.
200
1.0
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
Typ.
Typ.
0.18
18.6
0.78
580
158
4.5
3.5
8.3
90
44
30
--
--
--
--
--
--
--
--
--
--
8
6
9
Max. Units
Max. Units
-100
100
100
755
115
2.0
0.4
1.5
10
32
55
25
20
70
30
27
--
--
--
--
--
--
--
9
V/ C
nA
nC
pF
ns
ns
V
V
A
V
A
C
V
I
V
V
V
V
V
V
V
V
V
R
V
I
See Fig 6 & Fig 12
Integral reverse pn-diode
in the MOSFET
T
T
di
D
D
J
J
GS
DS
GS
GS
DS
DS
GS
DS
GS
DD
G
DS
=250 A
=9A
F
=25 C,I
=25 C,I
/dt=100A/ s
=6
=0V,I
=5V,I
=20V
=-20V
=200V
=160V,T
=5V,I
=40V,I
=0V,V
=100V,I
=160V,V
See Fig 13
Test Condition
Test Condition
See Fig 5
D
D
D
S
F
DS
=250 A
=250 A
=4.5A
D
=9A
=9A,V
=4.5A
D
=25V,f =1MHz
C
GS
=9A,
=125 C
See Fig 7
=5V,
GS
=0V
(4) (5)
(4) (5)
(4)
(4)
(4)
2