IRL630A Fairchild Semiconductor, IRL630A Datasheet - Page 4

• Manufacturer Part Number: IRL630A
• Description: MOSFET N-CH 200V 9A TO-220
• Manufacturer: Fairchild Semiconductor

Specifications of IRL630A

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 400 mOhm @ 4.5A, 5V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 9A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 27nC @ 5V
• Input Capacitance (ciss) @ Vds: 755pF @ 25V
• Power - Max: 69W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRL630A
1 0
1 . 2
1 . 1
1 . 0
0 . 9
0 . 8
1 0
1 0
1 0
-1
2
1
0
- 7 5
1 0
0
Fig 7. Breakdown Voltage vs. Temperature
@ N o t e s :
1 . T
2 . T
3 . S i n g l e P u l s e
- 5 0
C
J
Fig 9. Max. Safe Operating Area
= 2 5
= 1 5 0
- 2 5
T
V
o
J
DS
C
o
O p e r a t i o n i n T h i s A r e a
i s L i m i t e d b y R
C
, Junction Temperature [
, Drain-Source Voltage [V]
0
10
10
10
- 1
- 2
1 0
0
10
1
2 5
- 5
0.01
0.02
0.1
0.05
0.2
D=0.5
DS(on)
5 0
D C
1 0 m s
7 5
10
t
1
single pulse
- 4
1 m s
1 0 0
, Square Wave Pulse Duration
@ N o t e s :
1 0
1 . V
2 . I
1 0 0 s
o
2
C]
1 2 5
GS
D
= 2 5 0 A
= 0 V
Fig 11. Thermal Response
10
1 5 0
- 3
1 7 5
10
- 2
@ Notes :
Fig 10. Max. Drain Current vs. Case Temperature
1. Z
2. Duty Factor, D=t
3. T
P
3 . 0
2 . 5
2 . 0
1 . 5
1 . 0
0 . 5
0 . 0
DM
1 0
8
6
4
2
0
- 7 5
2 5
J M
J C
10
-T
Fig 8. On-Resistance vs. Temperature
(t)=1.81
- 5 0
- 1
C
t
=P
1
t
D M
2
- 2 5
5 0
*Z
T
[sec]
J
T
o
J C
, Junction Temperature [
c
C/W Max.
0
(t)
, Case Temperature [
10
1
0
/t
2
2 5
7 5
5 0
10
1 0 0
7 5
1
1 0 0
@ N o t e s :
o
C]
1 . V
2 . I
o
C]
GS
D
1 2 5
1 2 5
= 4 . 5 A
= 5 V
1 5 0
1 7 5
1 5 0
4