FQD2P40TF Fairchild Semiconductor, FQD2P40TF Datasheet - Page 2

• Manufacturer Part Number: FQD2P40TF
• Description: MOSFET P-CH 400V 1.56A DPAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQD2P40TF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 6.5 Ohm @ 780mA, 10V
• Drain To Source Voltage (vdss): 400V
• Current - Continuous Drain (id) @ 25° C: 1.56A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 13nC @ 10V
• Input Capacitance (ciss) @ Vds: 350pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 5 Ohms
• Forward Transconductance Gfs (max / Min): 1.26 S
• Drain-source Breakdown Voltage: - 400 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: - 1.56 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2008 Fairchild Semiconductor International
Elerical Characteristics
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 86mH, I
3. I
4. Pulse Test : Pulse width
5. Essentially independent of operating temperature
Off Characteristics
BV
/
I
I
I
On Characteristics
V
R
g
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
Q
Q
Q
Drain-Source Diode Characteristics and Maximum Ratings
I
I
V
t
Q
Symbol
DSS
GSSF
GSSR
d(on)
r
d(off)
f
S
SM
rr
SD
FS
BV
GS(th)
SD
DS(on)
iss
oss
rss
g
gs
gd
rr
DSS
T
DSS
-2.0A, di/dt
J
AS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
= -1.56A, V
200A/ s, V
DD
300 s, Duty cycle
= -50V, R
DD
Parameter
BV
DSS,
G
= 25
Starting T
2%
Starting T
T
J
C
= 25°C
= 25°C unless otherwise noted
J
= 25°C
V
I
V
V
V
V
V
V
V
V
f = 1.0 MHz
V
R
V
V
V
V
dI
D
GS
DS
DS
GS
GS
DS
GS
DS
DS
DD
DS
GS
GS
GS
G
F
= -250 A, Referenced to 25°C
/ dt = 100 A/ s
= 25
= -400 V, V
= -320 V, T
= V
= -50 V, I
= -25 V, V
= -320 V, I
= 0 V, I
= -30 V, V
= 30 V, V
= -10 V, I
= -200 V, I
= -10 V
= 0 V, I
= 0 V, I
Test Conditions
GS
, I
D
S
S
D
= -250 A
D
= -1.56 A
= -2.0 A,
D
DS
= -250 A
GS
DS
D
D
C
= -0.78 A
GS
= -0.78 A
= -2.0 A,
= -2.0 A,
= 0 V
= 125°C
= 0 V
= 0 V,
= 0 V
(Note 4, 5)
(Note 4, 5)
(Note 4)
(Note 4)
-400
Min
-3.0
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1.26
0.85
Typ
270
250
5.0
6.5
2.1
5.5
45
33
22
25
10
--
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9
-
-1.56
-6.24
Max
-100
100
-5.0
350
-5.0
-10
6.5
8.5
60
30
75
55
60
13
-1
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Rev. A3, October 2008
Units
V/°C
nC
nC
nC
nA
nA
pF
pF
pF
ns
ns
ns
ns
ns
V
V
S
A
A
V
A
A
C