FQD2P40TF Fairchild Semiconductor, FQD2P40TF Datasheet - Page 4

• Manufacturer Part Number: FQD2P40TF
• Description: MOSFET P-CH 400V 1.56A DPAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQD2P40TF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 6.5 Ohm @ 780mA, 10V
• Drain To Source Voltage (vdss): 400V
• Current - Continuous Drain (id) @ 25° C: 1.56A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 13nC @ 10V
• Input Capacitance (ciss) @ Vds: 350pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 5 Ohms
• Forward Transconductance Gfs (max / Min): 1.26 S
• Drain-source Breakdown Voltage: - 400 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: - 1.56 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2008 Fairchild Semiconductor International
Typical Characteristics
10
10
10
10
1.2
1.1
1.0
0.9
0.8
-1
-2
Figure 9. Maximum Safe Operating Area
-100
1
0
10
Figure 7. Breakdown Voltage Variation
0
-50
-V
T
vs. Temperature
J
, Junction Temperature [
DS
10
0
, Drain-Source Voltage [V]
※ Notes :
1 0
1
1 0
Operation in This Area
is Limited by R
1. T
2. T
3. Single Pulse
- 1
0
1 0
C
J
= 150
= 25
- 5
D = 0 .5
0 .0 2
o
0 .0 5
0 .0 1
C
o
0 .2
0 .1
50
C
DS(on)
DC
Figure 11. Transient Thermal Response Curve
10 ms
100
10
1 0
(Continued)
s in g le p u ls e
2
o
1 ms
- 4
C]
※ Notes :
t
1. V
2. I
1
100 s
, S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
D
GS
= -250 μ A
150
= 0 V
1 0
- 3
200
10
3
1 0
- 2
1.8
1.5
1.2
0.9
0.6
0.3
0.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
25
※ N o t e s :
Figure 8. On-Resistance Variation
1 0
Figure 10. Maximum Drain Current
1 . Z
2 . D u t y F a c t o r , D = t
3 . T
- 1
P
θ J C
J M
-50
DM
- T
( t ) = 3 . 2 9 ℃ / W M a x .
50
C
vs. Case Temperature
= P
T
vs. Temperature
J
T
t
, Junction Temperature [
D M
1
C
t
1 0
0
, Case Temperature [ ℃ ]
2
* Z
0
1
75
/ t
θ J C
2
( t )
50
100
1 0
1
100
o
C]
※ Notes :
125
1. V
2. I
150
D
GS
= -1.0 A
= -10 V
Rev. A3, October 2008
200
150