FQU2N90TU_WS Fairchild Semiconductor, FQU2N90TU_WS Datasheet - Page 120
FQU2N90TU_WS
Manufacturer Part Number
FQU2N90TU_WS
Description
MOSFET N-CH 900V 1.7A IPAK
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet
1.SFU9220TU_F080.pdf
(214 pages)
Specifications of FQU2N90TU_WS
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
7.2 Ohm @ 850mA, 10V
Drain To Source Voltage (vdss)
900V
Current - Continuous Drain (id) @ 25° C
1.7A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
15nC @ 10V
Input Capacitance (ciss) @ Vds
500pF @ 25V
Power - Max
2.5W
Mounting Type
Through Hole
Package / Case
IPak, TO-251, DPak, VPak (3 straight leads + tab)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
- Current page: 120 of 214
- Download datasheet (4Mb)
www.fairchildsemi.com
Small Signal Transistors – RF Amplifier Transistors
SOT-23 NPN Configuration
KST5179
MMBT5179
MMBT918
KSC2757
MMBT5770
KSC2223
KSC2756
KSC3123
KST10
MMBTH10
MMBTH11
KSC2755
KSC2715
MMBTH24
KST24
MMBTH10RG
MMBTH34
SOT-23 PNP Configuration
MMBTH81
TO-92 NPN Configuration
2N3663
KSP5179
MPS5179
PN5179
2N5770
PN3563
PN918
SS9018
KSC1730
BF494
KSC1674
KSC1187
KSP10
Products
V
CEO
12
12
15
15
15
20
20
20
25
25
25
30
30
30
30
40
40
20
12
12
12
12
15
15
15
15
15
20
20
20
25
(V)
V
CBO
20
20
30
30
30
30
30
30
30
30
30
30
35
40
40
40
40
20
30
20
20
20
30
30
30
30
30
30
30
30
30
(V) V
EBO
2
2
3
5
4
4
4
3
3
3
3
5
4
4
4
4
4
3
3
2
2
2
4
2
3
5
5
5
4
4
3
(V)
Max (A)
0.045
0.05
0.05
0.05
0.05
0.09
0.02
0.03
0.05
0.05
0.05
0.02
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.02
0.03
0.1
I
–
–
–
C
(MHz)
900
900
600
800
400
500
900
650
650
650
400
100
400
400
450
500
600
700
900
900
900
600
600
700
800
400
400
650
f
–
–
–
T
2-115
Discrete Power Products –
Min
25
25
20
60
50
40
60
60
60
60
60
60
70
30
30
50
40
60
20
25
25
25
50
20
20
28
40
65
40
40
60
Max
250
240
200
180
240
240
240
240
120
250
250
250
200
200
198
240
220
240
240
–
–
–
–
–
–
–
–
–
–
–
–
h
Bold = New Products (introduced January 2003 or later)
@V
FE
10
10
10
10
10
10
10
10
12
10
10
15
10
10
10
10
10
10
10
10
CE
1
1
1
6
6
1
1
1
1
5
6
(V) @I
C
3
3
3
5
8
1
5
5
4
4
4
3
2
8
8
1
7
5
8
3
3
3
8
8
3
1
5
1
1
2
4
(mA)
Bipolar Transistors and JFETs
Max (V)
0.4
0.4
0.4
0.5
0.4
0.3
0.5
0.5
0.5
0.5
0.4
0.2
0.5
0.4
0.4
0.4
0.4
0.4
0.5
0.5
0.3
0.5
–
–
–
–
–
–
–
–
–
V
@I
CE (sat)
C
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
–
–
–
–
–
–
–
–
–
4
4
4
5
4
(mA) @I
B
0.4
0.4
0.4
0.5
0.4
–
–
–
–
–
–
–
–
–
1
1
1
1
1
1
1
1
5
1
1
1
1
1
1
1
1
(mA)
Related parts for FQU2N90TU_WS
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
Fairchild Semiconductor [IGBT MODULE]
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet: