FQU2N90TU_WS Fairchild Semiconductor, FQU2N90TU_WS Datasheet - Page 16
FQU2N90TU_WS
Manufacturer Part Number
FQU2N90TU_WS
Description
MOSFET N-CH 900V 1.7A IPAK
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet
1.SFU9220TU_F080.pdf
(214 pages)
Specifications of FQU2N90TU_WS
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
7.2 Ohm @ 850mA, 10V
Drain To Source Voltage (vdss)
900V
Current - Continuous Drain (id) @ 25° C
1.7A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
15nC @ 10V
Input Capacitance (ciss) @ Vds
500pF @ 25V
Power - Max
2.5W
Mounting Type
Through Hole
Package / Case
IPak, TO-251, DPak, VPak (3 straight leads + tab)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
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SuperSOT-6/TSOP-6 (Continued)
FDC6306P
FDC6308P
FDC604P
FDC602P
FDC638P
FDC640P
FDC642P
FDC634P
FDC636P
FDC6318P
FDC606P
Products
Min. (V)
BV
-20
-20
-20
-20
-20
-20
-20
-20
-20
-12
-12
DSS
Config.
Single
Single
Single
Single
Single
Single
Single
Single
Dual
Dual
Dual
10V
–
–
–
–
–
–
–
–
–
–
0.033
0.035
0.048
0.053
0.065
0.026
4.5V
R
0.17
0.08
0.13
0.09
DS(ON)
2-11
Max (Ω) @ V
0.043
0.065
0.125
0.035
2.5V
0.25
0.05
0.08
0.11
0.18
0.1
GS
Replaced by FDC6306P
=
Discrete Power Products –
0.053
1.8V
0.06
0.2
–
–
–
–
–
–
–
Q
@V
g
Typ. (nC)
GS
7.2
7.2
5.4
19
14
10
18
3
9
6
= 5V
I
D
1.9
5.5
5.5
4.5
4.5
3.5
2.8
2.5
4
6
(A)
MOSFETs
P
D
0.96
0.96
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
(W)
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