FQU2N90TU_WS Fairchild Semiconductor, FQU2N90TU_WS Datasheet - Page 144

• Manufacturer Part Number: FQU2N90TU_WS
• Description: MOSFET N-CH 900V 1.7A IPAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQU2N90TU_WS

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 7.2 Ohm @ 850mA, 10V
• Drain To Source Voltage (vdss): 900V
• Current - Continuous Drain (id) @ 25° C: 1.7A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 10V
• Input Capacitance (ciss) @ Vds: 500pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Schottky Diodes and Rectifiers (Continued)
FYAF3004DN
FYAF3045DN
TO-3PF
Products
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Function
Configuration
Dual & Common
Dual & Common
Cathode
Cathode
I
300
300
(A)
FSM
2-139
(°C/W)
R
θJA
–
–
Discrete Power Products –
V
(V)
RRM
40
45
I
F (AV)
(A)
30
30
V
Diodes and Rectifiers
FM
0.55
0.55
(V)
Max
1000
1000
(µA) @V
I
RM
Max
40
45
R
(V)