FQI15P12TU Fairchild Semiconductor, FQI15P12TU Datasheet - Page 3

• Manufacturer Part Number: FQI15P12TU
• Description: MOSFET P-CH 120V 15A I2PAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQI15P12TU

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 200 mOhm @ 7.5A, 10V
• Drain To Source Voltage (vdss): 120V
• Current - Continuous Drain (id) @ 25° C: 15A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 38nC @ 10V
• Input Capacitance (ciss) @ Vds: 1100pF @ 25V
• Power - Max: 3.75W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2003 Fairchild Semiconductor Corporation
Typical Characteristics
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
2200
2000
1800
1600
1400
1200
1000
10
10
10
10
800
600
400
200
-1
2
1
0
10
0
0
10
-1
Top :
Bottom : -4.5 V
-1
Figure 5. Capacitance Characteristics
Figure 3. On-Resistance Variation vs.
Figure 1. On-Region Characteristics
Drain Current and Gate Voltage
-10.0 V
-15.0 V
-8.0 V
-7.0 V
-6.0 V
-5.5 V
-5.0 V
V
GS
C
oss
C
-V
iss
-V
C
DS
DS
20
rss
, Drain-Source Voltage [V]
-I
, Drain-Source Voltage [V]
D
10
10
, Drain Current [A]
0
0
V
GS
= -10V
40
C
C
C
iss
oss
rss
= C
= C
= C
10
※ Notes :
※ Note : T
gs
gd
ds
10
1. 250μ s Pulse Test
2. T
1
+ C
+ C
1
C
gd
V
gd
= 25℃
GS
(C
※ Notes ;
1. V
2. f = 1 MHz
ds
J
= -20V
= 25℃
= shorted)
GS
= 0 V
60
10
10
12
10
10
10
10
10
10
8
6
4
2
0
-1
-1
2
1
0
1
0
0.0
0
2
Figure 6. Gate Charge Characteristics
Figure 4. Body Diode Forward Voltage
25
o
C
Figure 2. Transfer Characteristics
175
0.5
175℃
Variation vs. Source Current
o
C
25℃
10
1.0
V
4
DS
-V
-V
Q
V
and Temperature
= -96V
-55
GS
SD
DS
G
V
, Total Gate Charge [nC]
, Gate-Source Voltage [V]
, Source-Drain voltage [V]
o
= -60V
C
DS
1.5
= -30V
2.0
20
6
2.5
※ Notes :
※ Notes :
1. V
2. 250μ s Pulse Test
1. V
2. 250μ s Pulse Test
3.0
※ Note : I
30
8
DS
GS
= -40V
= 0V
D
3.5
= -15A
Rev. A, December 2003
4.0
10
40