FQI15P12TU Fairchild Semiconductor, FQI15P12TU Datasheet - Page 4

• Manufacturer Part Number: FQI15P12TU
• Description: MOSFET P-CH 120V 15A I2PAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQI15P12TU

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 200 mOhm @ 7.5A, 10V
• Drain To Source Voltage (vdss): 120V
• Current - Continuous Drain (id) @ 25° C: 15A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 38nC @ 10V
• Input Capacitance (ciss) @ Vds: 1100pF @ 25V
• Power - Max: 3.75W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2003 Fairchild Semiconductor Corporation
Typical Characteristics
Figure 9. Maximum Safe Operating Area
1.2
1.1
1.0
0.9
0.8
10
10
10
10
Figure 7. Breakdown Voltage Variation
-100
-1
2
1
0
10
0
-50
Operation in This Area
is Limited by R
vs. Temperature
T
-V
J
, Junction Temperature [
DS
1 0
1 0
0
, Drain-Source Voltage [V]
1 0
DS(on)
- 1
- 2
※ Notes :
0
1 0
1. T
2. T
3. Single Pulse
10
- 5
C
J
1
= 25
= 175
D = 0 .5
0 .0 2
0 .0 1
50
0 .2
0 .1
0 .0 5
DC
o
C
o
C
Figure 11. Transient Thermal Response Curve
10 ms
1 0
(Continued)
s in g le p u ls e
100
- 4
o
1 ms
C]
※ Notes :
t
1. V
2. I
1
, S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
D
GS
= -250 μ A
100 s
150
= 0 V
10
2
1 0
- 3
200
1 0
- 2
20
15
10
3.0
2.5
2.0
1.5
1.0
0.5
0.0
5
0
25
-100
Figure 8. On-Resistance Variation
1 0
Figure 10. Maximum Drain Current
※ N o te s :
1 . Z
2 . D u ty F a c to r , D = t
3 . T
- 1
P
50
DM
-50
θ J C
J M
( t) = 1 .5 ℃ /W M a x .
- T
vs. Case Temperature
C
T
= P
T
vs. Temperature
J
t
, Junction Temperature [
C
1
75
, Case Temperature [ ℃ ]
1 0
t
0
D M
2
0
* Z
1
θ J C
/t
2
( t)
100
50
1 0
1
125
100
o
C]
※ Notes :
1. V
2. I
150
150
D
GS
= -7.5 A
= -10 V
Rev. A, December 2003
175
200