FDD8445 Fairchild Semiconductor, FDD8445 Datasheet - Page 3

• Manufacturer Part Number: FDD8445
• Description: MOSFET N-CH 40V 70A DPAK
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDD8445

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8.7 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 70A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 59nC @ 10V
• Input Capacitance (ciss) @ Vds: 4050pF @ 25V
• Power - Max: 79W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 15.2A
• Drain Source Voltage Vds: 40V
• On Resistance Rds(on): 6.7mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 2.8V
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.0087 Ohms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 70 A
• Power Dissipation: 79 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDD8445TR

FDD8445 Rev A (W)
Notes:
1: Maximum package current capability is 50A.
2: Starting T
Electrical Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For
t
t
t
t
t
t
V
t
Q
(on)
d(on)
r
d(off)
f
off
rr
SD
rr
Symbol
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
J
= 25
o
Turn-On Time
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Turn-Off Time
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovery Charge
C, L=0.18mH, I
AS
a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
=40A.
Parameter
T
J
= 25°C unless otherwise noted
certification.
V
V
I
I
I
I
SD
SD
F
F
DD
GS
= 50A, dI
= 50A, dI
=50A
=25A
3
= 20V, I
= 10V, R
Test Conditions
F
F
/dt=100A/μs
/dt=100A/μs
D
GS
= 50A
= 2Ω
Min
-
-
-
-
-
-
-
-
-
-
Typ
9.6
10
82
26
-
-
-
-
-
-
www.fairchildsemi.com
Max
1.25
138
1.0
53
39
38
-
-
-
-
Units
nC
ns
ns
ns
ns
ns
ns
ns
V
V