FDD8445 Fairchild Semiconductor, FDD8445 Datasheet - Page 6

• Manufacturer Part Number: FDD8445
• Description: MOSFET N-CH 40V 70A DPAK
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDD8445

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8.7 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 70A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 59nC @ 10V
• Input Capacitance (ciss) @ Vds: 4050pF @ 25V
• Power - Max: 79W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 15.2A
• Drain Source Voltage Vds: 40V
• On Resistance Rds(on): 6.7mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 2.8V
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.0087 Ohms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 70 A
• Power Dissipation: 79 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDD8445TR

FDD8445 Rev A (W)
Typical Characteristics
Figure 11. Normalized Gate Threshold Voltage vs
10000
1000
100
Figure 13. Capacitance vs Drain to Source
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.1
-80
-40
T
V
J
Junction Temperature
, JUNCTION TEMPERATURE
DS
, DRAIN TO SOURCE VOLTAGE (V)
0
Voltage
1
40
V
I
D
GS
=250
=V
C
ISS
C
DS
80
μ
RSS
A
120
C
OSS
(
o
10
C
f = 1MHz
V
)
GS
160
= 0V
200
40
6
Breakdown Voltage vs Junction Temperature
10
Figure 14. Gate Charge vs Gate to Source
1.10
1.05
1.00
0.95
0.90
8
6
4
2
0
0
Figure 12. Normalized Drain to Source
-80
I
D
=50A
I
D
-40
=250
T
J
, JUNCTION TEMPERATURE
μ
Q
A
g
20
0
V
, GATE CHARGE (nC)
DD
Voltage
=20V
40
V
DD
=15V
80
V
DD
40
=25V
www.fairchildsemi.com
120
(
o
C
)
160
60
200