FQP6N40CF Fairchild Semiconductor, FQP6N40CF Datasheet

MOSFET N-CH 400V 6A TO-220

FQP6N40CF

Manufacturer Part Number
FQP6N40CF
Description
MOSFET N-CH 400V 6A TO-220
Manufacturer
Fairchild Semiconductor
Series
FRFET™r
Datasheet

Specifications of FQP6N40CF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.1 Ohm @ 3A, 10V
Drain To Source Voltage (vdss)
400V
Current - Continuous Drain (id) @ 25° C
6A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
20nC @ 10V
Input Capacitance (ciss) @ Vds
625pF @ 25V
Power - Max
73W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.1 Ohms
Forward Transconductance Gfs (max / Min)
4.7 S
Drain-source Breakdown Voltage
400 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
6 A
Power Dissipation
73 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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©2006 Fairchild Semiconductor Corporation
FQP6N40CF/FQPF6N40CF Rev. B
FQP6N40CF/FQPF6N40CF
400V N-Channel MOSFET
Features
• 6A, 400V, R
• Low gate charge ( typical 16nC)
• Low Crss ( typical 15pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Fast recovery body diode (typical 70ns)
Absolute Maximum Ratings
Thermal Characteristics
* Drain current limited by maximum junction temperature
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
Symbol
Symbol
J
L
DSS
GSS
AS
AR
D
θJC
θCS
θJA
, T
STG
DS(on)
G
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
D
S
= 1.1 Ω @V
- Continuous (T
- Continuous (T
- Pulsed
- Derate above 25°C
GS
TO-220
FQP Series
C
Parameter
Parameter
= 10 V
= 25°C)
C
C
= 25°C)
= 100°C)
G
D
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
S
1
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficiency switched mode power supplies, electronic lamp
ballasts based on half bridge topology.
FQP6N40CF
FQP6N40CF
TO-220F
FQPF Series
0.58
1.71
62.5
3.6
24
73
0.5
6
-55 to +150
± 30
400
270
300
4.5
73
6
FQPF6N40CF
FQPF6N40CF
G
3.6*
24*
0.3
3.31
62.5
38
6*
--
FRFET
S
D
February 2006
www.fairchildsemi.com
Units
Units
W/°C
V/ns
°C/W
°C/W
°C/W
mJ
mJ
°C
°C
W
V
A
A
A
V
A
TM

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FQP6N40CF Summary of contents

Page 1

... Thermal Resistance, Case-to-Sink θCS R Thermal Resistance, Junction-to-Ambient θJA ©2006 Fairchild Semiconductor Corporation FQP6N40CF/FQPF6N40CF Rev. B Description = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to ...

Page 2

... Starting 13.7mH 6A 50V ≤ 6A, di/dt ≤ 200A/µs, V ≤ Starting DSS, 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ Essentially independent of operating temperature FQP6N40CF/FQPF6N40CF Rev. B Package Reel Size TO-220 - TO-220F - T = 25°C unless otherwise noted C Test Conditions = 250 µ 250 µ ...

Page 3

... I , Drain Current [A] D Figure 5. Capacitance Characteristics 1200 1000 800 C iss C 600 oss 400 C rss 200 Drain-Source Voltage [V] DS FQP6N40CF/FQPF6N40CF Rev. B Figure 2. Transfer Characteristics Notes : ※ 1. 250µ s Pulse Test ℃ Figure 4. Body Diode Forward Voltage 10V 20V GS ※ Note : ℃ ...

Page 4

... Single Pulse - Drain-Source Voltage [V] DS Figure 10. Maximum Drain Current vs. Case Temperature Case Temperature [ ] C FQP6N40CF/FQPF6N40CF Rev. B (Continued) Figure 8. On-Resistance Variation 3.0 2.5 2.0 1.5 1.0 Notes : ※ 250 µA 0.5 D 0.0 50 100 150 200 -100 o C] Figure 9-2. Maximum Safe Operating Area ...

Page 5

... Typical Performance Characteristics Figure 11-1. Transient Thermal Response Curve for FQP6N40CF Figure 11-2. Transient Thermal Response Curve for FQPF6N40CF FQP6N40CF/FQPF6N40CF Rev. B (Continued tio tio ※ ( ℃ θ ( θ ※ ( ℃ θ ( θ www.fairchildsemi.com ...

Page 6

... Unclamped Inductive Switching Test Circuit & Waveforms FQP6N40CF/FQPF6N40CF Rev. B Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms 6 www.fairchildsemi.com ...

Page 7

... FQP6N40CF/FQPF6N40CF Rev. B Peak Diode Recovery dv/dt Test Circuit & Waveforms 7 www.fairchildsemi.com ...

Page 8

... Mechanical Dimensions 9.90 ø3.60 ±0.10 1.27 2.54TYP ±0.20 [2.54 ] 10.00 FQP6N40CF/FQPF6N40CF Rev. B TO-220 ±0.20 (8.70) ±0.10 ±0.10 1.52 ±0.10 0.80 2.54TYP ±0.20 [2.54 ] ±0.20 8 ±0.20 4.50 +0.10 1.30 –0.05 +0.10 ±0.20 0.50 2.40 –0.05 Dimensions in Millimeters www.fairchildsemi.com ...

Page 9

... Mechanical Dimensions MAX1.47 ±0.10 0.80 ±0.10 0.35 2.54TYP ±0.20 [2.54 ] FQP6N40CF/FQPF6N40CF Rev. B (Continued) TO-220F ±0.20 ±0.10 10.16 ø3.18 (7.00) (1.00x45°) #1 2.54TYP ±0.20 [2.54 ] ±0.20 9.40 9 ±0.20 2.54 (0.70) +0.10 0.50 ±0.20 2.76 –0.05 Dimensions in Millimeters www.fairchildsemi.com ...

Page 10

... PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary No Identification Needed Obsolete FQP6N40CF/FQPF6N40CF Rev. B ISOPLANAR™ PowerSaver™ LittleFET™ PowerTrench MICROCOUPLER™ QFET MicroFET™ QS™ MicroPak™ ...

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