FQP6N40CF Fairchild Semiconductor, FQP6N40CF Datasheet - Page 3

• Manufacturer Part Number: FQP6N40CF
• Description: MOSFET N-CH 400V 6A TO-220
• Manufacturer: Fairchild Semiconductor
• Series: FRFET™r

Specifications of FQP6N40CF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.1 Ohm @ 3A, 10V
• Drain To Source Voltage (vdss): 400V
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 10V
• Input Capacitance (ciss) @ Vds: 625pF @ 25V
• Power - Max: 73W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.1 Ohms
• Forward Transconductance Gfs (max / Min): 4.7 S
• Drain-source Breakdown Voltage: 400 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 6 A
• Power Dissipation: 73 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FQP6N40CF/FQPF6N40CF Rev. B
Typical Performance Characteristics
Figure 5. Capacitance Characteristics
Figure 3. On-Resistance Variation vs.
Figure 1. On-Region Characteristics
10
Drain Current and Gate Voltage
1200
1000
10
10
800
600
400
200
-1
1
0
10
0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
10
-1
Top :
Bottom : 5.0 V
-1
0
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
V
GS
V
5
V
DS
DS
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
10
10
0
0
I
D
, Drain Current [A]
C
C
C
oss
iss
rss
V
10
GS
= 10V
C
C
C
iss
oss
rss
※
10
= C
= C
10
= C
1. 250µ s Pulse Test
2. T
1
V
1
Notes :
gs
gd
ds
GS
+ C
C
15
+ C
※
= 25 ℃
= 20V
gd
gd
Note : T
(C
※
1. V
2. f = 1 MHz
ds
Note ;
= shorted)
GS
J
= 25 ℃
= 0 V
20
3
10
10
10
10
10
10
12
10
8
6
4
2
0
-1
-1
1
0
0.2
1
0
0
2
Figure 2. Transfer Characteristics
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
25
o
C
Variation vs. Source Current
0.4
150
150 ℃
o
C
5
4
V
DS
V
V
Q
V
SD
GS
0.6
= 320V
DS
G
and Temperatue
, Source-Drain voltage [V]
, Total Gate Charge [nC]
, Gate-Source Voltage [V]
V
= 200V
DS
25 ℃
= 80V
-55
o
0.8
10
C
6
1.0
※
1. V
2. 250µ s Pulse Test
Notes :
※
1. V
2. 250µ s Pulse Test
DS
Notes :
※
15
8
= 40V
GS
Note : I
= 0V
1.2
D
= 6A
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1.4
10
20