FDMC2523P Fairchild Semiconductor, FDMC2523P Datasheet

MOSFET P-CH 150V 3A MLP 3.3SQ

FDMC2523P

Manufacturer Part Number
FDMC2523P
Description
MOSFET P-CH 150V 3A MLP 3.3SQ
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet

Specifications of FDMC2523P

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.5 Ohm @ 1.5A, 10V
Drain To Source Voltage (vdss)
150V
Current - Continuous Drain (id) @ 25° C
3A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
9nC @ 10V
Input Capacitance (ciss) @ Vds
270pF @ 25V
Power - Max
42W
Mounting Type
Surface Mount
Package / Case
8-MLP, Power33
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
1.5 Ohms
Forward Transconductance Gfs (max / Min)
1.4 S
Drain-source Breakdown Voltage
- 150 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
3 A
Power Dissipation
42 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDMC2523PTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDMC2523P
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Part Number:
FDMC2523P
0
Company:
Part Number:
FDMC2523P
Quantity:
60 000
©2006 Fairchild Semiconductor Corporation
FDMC2523P Rev.C
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
FDMC2523P
P-Channel QFET
-150V, -3A, 1.5Ω
Features
V
V
I
P
T
T
dv/dt
R
R
D
J
L
DS
GS
D
θJC
θJA
Max r
Low Crss ( typical 10pF)
Fast Switching
Low gate charge ( typical 6.2 nC )
Improved dv / dt capability
RoHS Compliant
, T
Symbol
Device Marking
STG
FDMC2523P
DS(on)
5
6
= 1.5Ω at V
7
Bottom
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
Power Dissipation (Steady State)
Operating and Storage Junction Temperature Range
Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
Peak Diode Recovery dv/dt
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
8
GS
4
= -10V, I
3
FDMC2523P
-Continuous
-Pulsed
2
Device
1
D
Power 33
®
= -1.5A
T
A
= 25°C unless otherwise noted
D
Parameter
T
D
T
T
C
C
C
= 25°C
D
= 100°C
= 25°C
Power 33
Package
D
Top
1
General Description
These P-Channel MOSFET enhancement mode power field
effect transistors are produced using Fairchild's proprietary,
planar stripe, DMOS technology. This advanced technology has
been especially tailored to minimize on-state resistance, provide
superior switching performance, and withstand high energy
pulse in the avalanche and commutation mode. These devices
are well suited for low voltage applications such as audio
amplifier, high efficiency switching DC/DC converters, and DC
motor control.
Application
S
Active Clamp Switch
S
S
G
Reel Size
7’’
D
D
D
D
(Note 1a)
(Note 1)
7
5
6
8
(Note 2)
Tape Width
8mm
-55 to +150
Ratings
-150
±30
-1.8
300
-12
3.0
42
60
-3
-5
January 2007
www.fairchildsemi.com
3000 units
4
3
1
2
Quantity
G
S
S
S
Units
°C/W
V/ns
°C
°C
W
V
V
A
tm

Related parts for FDMC2523P

FDMC2523P Summary of contents

Page 1

... Package Marking and Ordering Information Device Marking Device FDMC2523P FDMC2523P ©2006 Fairchild Semiconductor Corporation FDMC2523P Rev.C ® General Description = -1.5A These P-Channel MOSFET enhancement mode power field D effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has ...

Page 2

... I < -3A, dI/dt < 300A/us, V < Starting VDSS 3: Pulse Test: Pulse Width < 300μs, Duty cycle < 2.0%. 4: Essentially independent of operating temperature. FDMC2523P Rev 25°C unless otherwise noted J Test Conditions I = -250μ -250μA, referenced to 25°C ...

Page 3

... T , JUNCTION TEMPERATURE J Figure 3. Normalized On- Resistance vs Junction Temperature 3.0 PULSE DURATION = 300 2.5 DUTY CYCLE = 2.0%MAX V = -5V DD 2.0 1 125 J 1.0 0.5 0 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics FDMC2523P Rev 25°C unless otherwise noted J μ - - 100 125 150 ( ) o C μ ...

Page 4

... Q , GATE CHARGE(nC) g Figure 7. Gate Charge Characteristics 125 0 TIME IN AVALANCHE AV Figure 9. Unclamped Inductive Switching Capability 500 100 10 SINGLE PULSE R = 135 θ 0 Figure 11. Single Pulse Maximum Power Dissipation FDMC2523P Rev 25°C unless otherwise noted J 1000 = -50V V = -75V -100V μ C PULSE WIDTH ( 100 C 10 ...

Page 5

... Typical Characteristics 2 1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.1 0.02 0.01 0.01 1E FDMC2523P Rev 25°C unless otherwise noted J SINGLE PULSE 135 C/W θ RECTANGULAR PULSE DURATION (s) Figure 12. Transient Thermal Response Curve NOTES: DUTY FACTOR PEAK θJA θ www.fairchildsemi.com 3 10 ...

Page 6

... FDMC2523P Rev.C 6 www.fairchildsemi.com ...

Page 7

... PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary No Identification Needed Obsolete FDMC2523P Rev. C OCX™ SILENT SWITCHER OCXPro™ SMART START™ ® OPTOLOGIC SPM™ OPTOPLANAR™ Stealth™ ...

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