FDS4141 Fairchild Semiconductor, FDS4141 Datasheet - Page 2
![MOSFET P-CH 40V 10.8A 8-SOIC](/photos/5/42/54236/261-8-soic_sml.jpg)
FDS4141
Manufacturer Part Number
FDS4141
Description
MOSFET P-CH 40V 10.8A 8-SOIC
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDS4141.pdf
(6 pages)
Specifications of FDS4141
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
13 mOhm @ 10.5A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
10.8A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
49nC @ 10V
Input Capacitance (ciss) @ Vds
2670pF @ 20V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Single Quad Drain Triple Source
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.013 Ohm @ 10 V
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
10.8 A
Power Dissipation
5000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDS4141TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDS4141
Manufacturer:
FSC
Quantity:
12 000
Company:
Part Number:
FDS4141
Manufacturer:
FSC
Quantity:
50 000
Part Number:
FDS4141
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
FDS4141-NL
Manufacturer:
FAIRCHILD
Quantity:
2 500
Part Number:
FDS4141-NL
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
©2007 Fairchild Semiconductor Corporation
FDS4141 Rev.C
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
NOTES:
1. R
2. Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
3. UIL condition: Starting T
BV
∆BV
I
I
V
r
g
C
C
C
R
t
t
t
t
Q
Q
Q
Q
V
t
Q
∆V
DSS
GSS
∆T
d(on)
r
d(off)
f
rr
DS(on)
FS
the user's board design.
GS(th)
SD
iss
oss
rss
g
∆T
g
g
gs
gd
rr
Symbol
θJA
DSS
J
GS(th)
DSS
J
is determined with the device mounted on a 1in
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
J
= 25°C, L = 3mH, I
Parameter
AS
= -14A, V
2
T
pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
J
a) 50°C/W when mounted on a
= 25°C unless otherwise noted
DD
1in
2
= -40V, V
pad of 2 oz copper.
GS
= -10V.
V
V
V
V
V
I
V
V
V
V
V
f = 1MHz
f = 1MHz
I
I
V
V
V
V
I
D
D
D
F
GS
GS
GS
GS
DD
DD
GS
GS
GS
DS
GS
DS
GS
GS
= -250µA, referenced to 25°C
= -10.5A, di/dt = 100A/µs
= -250µA, V
= -250µA, referenced to 25°C
= 0V to -10V
= 0V to -5V
= -20V, V
= -20V, I
= -10V, R
= -32V,
= V
= -10V, I
= -4.5V, I
= -10V, I
= -5V, I
= 0V, I
= 0V, I
= ±20V, V
2
DS
Test Conditions
, I
S
S
D
D
= -10.5A
= -2.1A
D
D
D
D
GS
GEN
= -10.5A
GS
DS
= -10.5A,
= -250µA
= -10.5A
= -8.4A
= -10.5A, T
= 0V,
= 0V
= 0V
= 6Ω
V
I
D
DD
= -10.5A
= -20V,
J
(Note 2)
(Note 2)
= 125°C
θJC
is guaranteed by design while R
b) 125°C/W when mounted on a
minimum pad.
Min
-1.0
-40
2005
15.2
16.8
-0.8
-0.7
11.0
Typ
-1.6
355
190
-33
5.3
26
14
10
42
12
35
19
37
5
6
7
5
2670
θCA
±100
-1.3
-1.2
Max
13.0
19.0
19.9
-3.0
475
285
www.fairchildsemi.com
20
10
68
22
49
27
42
26
-1
is determined by
mV/°C
mV/°C
Units
mΩ
nC
nC
nC
nC
nC
µA
nA
pF
pF
pF
ns
ns
ns
ns
ns
Ω
V
V
V
S