FDS4141 Fairchild Semiconductor, FDS4141 Datasheet - Page 4

• Manufacturer Part Number: FDS4141
• Description: MOSFET P-CH 40V 10.8A 8-SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS4141

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 13 mOhm @ 10.5A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 10.8A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 49nC @ 10V
• Input Capacitance (ciss) @ Vds: 2670pF @ 20V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.013 Ohm @ 10 V
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 10.8 A
• Power Dissipation: 5000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDS4141TR

©2007 Fairchild Semiconductor Corporation
FDS4141 Rev.C
Typical Characteristics
0.01
100
0.1
10
10
10
20
Figure 7.
8
6
4
2
0
1
1
0.01
0.01
0
Figure 9.
I
D
Figure 11. Forward Bias Safe
THIS AREA IS
LIMITED BY r
= -10.5A
5
-V
Switching Capability
V
0.1
Gate Charge Characteristics
DD
DS
0.1
10
t
AV
, DRAIN to SOURCE VOLTAGE (V)
Operating Area
= -15V
Unclamped Inductive
, TIME IN AVALANCHE(ms)
Q
SINGLE PULSE
T
R
T
g
DS(on)
J
A
θ
, GATE CHARGE(nC)
JA
= MAX RATED
= 25
15
V
= 125
DD
o
1
T
C
= -20V
J
1
o
= 125
20
C/W
T
o
V
C
J
DD
25
= 25°C unless otherwise noted
10
= -25V
10
30
T
J
= 25
100
o
35
C
1ms
10ms
100ms
1s
10s
DC
100
500
40
200
4
1000
2000
5000
1000
100
100
Figure 10.
12
10
0.5
60
9
6
3
0
1
10
0.1
25
Figure 12.
Current vs Ambient Temperature
-4
Figure 8.
R
f = 1MHz
V
θ
GS
JA
10
= 0V
= 50
-3
-V
V
50
Power Dissipation
Maximum Continuous Drain
to Source Voltage
DS
T
GS
o
C/W
A
, DRAIN TO SOURCE VOLTAGE (V)
,
Single Pulse Maximum
= -10V
Capacitance vs Drain
t, PULSE WIDTH (sec)
10
AMBIENT TEMPERATURE (
-2
V
GS
1
75
= -4.5V
10
-1
1
100
V
GS
C
C
C
= -10V
SINGLE PULSE
R
T
rss
iss
oss
A
θ
10
JA
= 25
= 125
o
10
C )
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125
o
C
100
o
C/W
1000
40
150