FQD3P50TM_F085 Fairchild Semiconductor, FQD3P50TM_F085 Datasheet - Page 3

• Manufacturer Part Number: FQD3P50TM_F085
• Description: MOSFET P-CH 500V 2.1A DPAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQD3P50TM_F085

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4.9 Ohm @ 1.05A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 2.1A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 23nC @ 10V
• Input Capacitance (ciss) @ Vds: 660pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 4.9 Ohms
• Forward Transconductance Gfs (max / Min): 2.1 S
• Drain-source Breakdown Voltage: - 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: - 2.1 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2009 Fairchild Semiconductor International
Typical Characteristics
1200
1000
800
600
400
200
10
10
10
8
7
6
5
4
3
2
-1
-2
0
0
10
10
0
Figure 5. Capacitance Characteristics
-1
Figure 3. On-Resistance Variation vs.
-1
Top :
Bottom : -5.5 V
Figure 1. On-Region Characteristics
Drain Current and Gate Voltage
-15.0 V
-10.0 V
-8.0 V
-7.0 V
-6.5 V
-6.0 V
V
GS
2
-V
V
V
DS
DS
GS
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
-I
= - 20V
D
10
10
, Drain Current [A]
0
0
V
GS
= - 10V
4
C
C
C
oss
iss
rss
C
C
C
iss
oss
rss
※ Notes :
= C
= C
= C
10
10
1. 250μ s Pulse Test
2. T
※ Note : T
6
gs
gd
ds
1
1
C
+ C
+ C
= 25℃
gd
gd
※ Notes :
(C
1. V
2. f = 1 MHz
J
ds
= 25℃
= shorted)
GS
= 0 V
8
10
10
10
10
12
10
8
6
4
2
0
-1
-1
0
0
0.0
0
2
Figure 6. Gate Charge Characteristics
Figure 4. Body Diode Forward Voltage
Figure 2. Transfer Characteristics
2
Variation vs. Source Current
0.5
25℃
150℃
150℃
4
4
-V
-V
Q
SD
and Temperature
GS
6
G
1.0
, Source-Drain Voltage [V]
, Total Gate Charge [nC]
, Gate-Source Voltage [V]
25℃
V
DS
8
V
DS
= -400V
V
DS
= -250V
-55℃
= -100V
1.5
10
6
12
2.0
14
※ Notes :
※ Notes :
1. V
2. 250μ s Pulse Test
※ Note : I
1. V
2. 250μ s Pulse Test
8
DS
GS
16
= -50V
= 0V
2.5
D
= -2.7 A
18
Rev. A2, January 2009
3.0
10
20