FQD3P50TM_F085 Fairchild Semiconductor, FQD3P50TM_F085 Datasheet - Page 8
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FQD3P50TM_F085
Manufacturer Part Number
FQD3P50TM_F085
Description
MOSFET P-CH 500V 2.1A DPAK
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet
1.FQD3P50TM_F085.pdf
(9 pages)
Specifications of FQD3P50TM_F085
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
4.9 Ohm @ 1.05A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
2.1A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
23nC @ 10V
Input Capacitance (ciss) @ Vds
660pF @ 25V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
4.9 Ohms
Forward Transconductance Gfs (max / Min)
2.1 S
Drain-source Breakdown Voltage
- 500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
- 2.1 A
Power Dissipation
2.5 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Mechanical Dimensions
I - PAK
Dimensions in Millimeters
©2009 Fairchild Semiconductor International
Rev. A2, January 2009