FQD3P50TM_F085 Fairchild Semiconductor, FQD3P50TM_F085 Datasheet - Page 5

• Manufacturer Part Number: FQD3P50TM_F085
• Description: MOSFET P-CH 500V 2.1A DPAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQD3P50TM_F085

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4.9 Ohm @ 1.05A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 2.1A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 23nC @ 10V
• Input Capacitance (ciss) @ Vds: 660pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 4.9 Ohms
• Forward Transconductance Gfs (max / Min): 2.1 S
• Drain-source Breakdown Voltage: - 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: - 2.1 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2009 Fairchild Semiconductor International
-10V
-10V
-10V
-10V
12V
12V
t
t
p
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-3mA
-3mA
200nF
200nF
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G
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G
G
50KΩ
50KΩ
V
V
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V
GS
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GS
Unclamped Inductive Switching Test Circuit & Waveforms
V
V
300nF
300nF
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V
I
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I
DS
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DS
Resistive Switching Test Circuit & Waveforms
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D
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Gate Charge Test Circuit & Waveform
DUT
DUT
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Same Type
Same Type
DUT
DUT
as DUT
as DUT
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-10V
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DSS
DSS
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I
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V
GS
GS
DD
DD
AS
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GS
DS
DS
E
E
E
10%
10%
AS
AS
AS
Q
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90%
90%
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gd
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Charge
Charge
BV
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BV
DSS
DSS
DSS
DSS
- V
- V
t
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d(off)
d(off)
DD
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Time
Time
off
off
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f
f
Rev. A2, January 2008
V
V
DS
DS
(t)
(t)