FQPF7N65C Fairchild Semiconductor, FQPF7N65C Datasheet - Page 3

• Manufacturer Part Number: FQPF7N65C
• Description: MOSFET N-CH 650V 7A TO-220F
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQPF7N65C

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.4 Ohm @ 3.5A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 7A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 36nC @ 10V
• Input Capacitance (ciss) @ Vds: 1245pF @ 25V
• Power - Max: 52W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.4 Ohms
• Forward Transconductance Gfs (max / Min): 8 S
• Drain-source Breakdown Voltage: 650 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 7 A
• Power Dissipation: 52 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2004 Fairchild Semiconductor Corporation
Typical Characteristics
2000
1600
1200
10
10
10
800
400
-1
Figure 5. Capacitance Characteristics
1
0
0
3.0
2.5
2.0
1.5
1.0
Figure 3. On-Resistance Variation vs
10
-1
Figure 1. On-Region Characteristics
Top :
Bottom : 5.0 V
Drain Current and Gate Voltage
15.0 V
10.0 V
0
8.0 V
7.0 V
6.0 V
5.5 V
V
GS
10
0
V
V
DS
DS
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
10
I
5
D
0
, Drain Current [A]
C
C
C
iss
oss
rss
V
GS
= 10V
10
※
1. 250µs Pulse Test
2. T
10
C
C
C
Notes :
iss
oss
rss
1
V
C
= C
= C
GS
= C
= 25 ℃
10
gs
= 20V
ds
gd
1
+ C
+ C
※
gd
gd
Note : T
(C
※
1. V
2. f = 1 MHz
ds
Note ;
= shorted)
GS
15
J
= 0 V
= 25 ℃
10
10
10
10
12
10
10
10
8
6
4
2
0
-1
-1
1
0
1
0
0.2
0
2
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
Figure 2. Transfer Characteristics
25
150
0.4
o
Variation with Source Current
C
4
o
C
150 ℃
0.6
4
8
25 ℃
V
V
and Temperature
GS
SD
Q
0.8
, Source-Drain voltage [V]
G
, Gate-Source Voltage [V]
, Total Gate Charge [nC]
-55
V
V
V
DS
12
DS
o
DS
C
1.0
= 520V
= 325V
= 130V
6
1.2
16
※
Note : I
1.4
D
※
= 7A
20
1. V
2. 250µs Pulse Test
Notes :
※
DS
1. V
2. 250µs Pulse Test
8
= 40V
Notes :
1.6
GS
= 0V
24
1.8
28
2.0
10
Rev. A, May 2004