FQPF7N65C Fairchild Semiconductor, FQPF7N65C Datasheet - Page 4

• Manufacturer Part Number: FQPF7N65C
• Description: MOSFET N-CH 650V 7A TO-220F
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQPF7N65C

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.4 Ohm @ 3.5A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 7A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 36nC @ 10V
• Input Capacitance (ciss) @ Vds: 1245pF @ 25V
• Power - Max: 52W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.4 Ohms
• Forward Transconductance Gfs (max / Min): 8 S
• Drain-source Breakdown Voltage: 650 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 7 A
• Power Dissipation: 52 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2004 Fairchild Semiconductor Corporation
Typical Characteristics
10
10
10
10
8
6
4
2
0
25
-1
-2
1
0
10
Figure 9-1. Maximum Safe Operating Area
1.2
1.1
1.0
0.9
0.8
-100
0
Figure 7. Breakdown Voltage Variation
Figure 10. Maximum Drain Current
50
-50
Operation in This Area
is Limited by R
vs Case Temperature
V
T
DS
C
T
10
vs Temperature
, Case Temperature [ ]
, Drain-Source Voltage [V]
J
, Junction Temperature [
for FQP7N65C
1
0
75
DS(on)
※
1. T
2. T
3. Single Pulse
Notes :
C
J
= 25
= 150
50
o
100
C
o
C
DC
℃
10
(Continued)
100 ms
100
2
10 ms
o
C]
1 ms
125
※
1. V
2. I
Notes :
100 s
D
GS
150
= 250 µA
= 0 V
150
10
200
3
Figure 9-2. Maximum Safe Operating Area
10
10
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10
10
-100
-1
-2
1
0
10
0
Figure 8. On-Resistance Variation
-50
Operation in This Area
is Limited by R
T
V
for FQPF7N65C
J
vs Temperature
DS
, Junction Temperature [
10
0
, Drain-Source Voltage [V]
※
1
1. T
2. T
3. Single Pulse
Notes :
DS(on)
C
J
= 150
= 25
o
C
o
C
50
DC
100
10 ms
10
o
2
C]
1 ms
100 s
※
1. V
2. I
Notes :
150
D
10 s
GS
= 3.5 A
= 10 V
200
Rev. A, May 2004
10
3