FDD8444 Fairchild Semiconductor, FDD8444 Datasheet - Page 3

• Manufacturer Part Number: FDD8444
• Description: MOSFET N-CH 40V 145A DPAK
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDD8444

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 5.2 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 145A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 116nC @ 10V
• Input Capacitance (ciss) @ Vds: 6195pF @ 25V
• Power - Max: 153W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0094 Ohm @ 10 V
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 145 A
• Power Dissipation: 153000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 17.5A
• Drain Source Voltage Vds: 40V
• On Resistance Rds(on): 5.2mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 2.5V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDD8444TR

FDD8444 Rev B (W)
Electrical Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Notes:
1: Package current limitation is 50A.
2: Starting T
t
t
t
t
t
t
V
t
Q
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For
d(on)
d(off)
f
on
r
off
rr
Symbol
SD
rr
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
J
= 25
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovery Charge
Turn-On Time
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Turn-Off Time
o
C, L = 0.67mH, I
Parameter
a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
AS
= 40A
T
J
= 25
o
C unless otherwise noted
V
V
I
I
I
SD
SD
F
DD
GS
= 50A, dI
certification.
= 50A
= 25A
= 20V, I
= 10V, R
Test Conditions
3
F
D
/dt = 100A/μs
GS
= 50A
= 2Ω
Min
-
-
-
-
-
-
-
-
-
-
Typ
0.9
0.8
12
78
48
15
39
45
-
-
www.fairchildsemi.com
1.25
Max
135
1.0
95
51
59
-
-
-
-
Units
nC
ns
ns
ns
ns
ns
ns
ns
V