FDD8444 Fairchild Semiconductor, FDD8444 Datasheet - Page 3
![MOSFET N-CH 40V 145A DPAK](/photos/5/57/55764/fdd8444_sml.jpg)
FDD8444
Manufacturer Part Number
FDD8444
Description
MOSFET N-CH 40V 145A DPAK
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDD8444.pdf
(7 pages)
Specifications of FDD8444
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
5.2 mOhm @ 50A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
145A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
116nC @ 10V
Input Capacitance (ciss) @ Vds
6195pF @ 25V
Power - Max
153W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0094 Ohm @ 10 V
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
145 A
Power Dissipation
153000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Continuous Drain Current Id
17.5A
Drain Source Voltage Vds
40V
On Resistance Rds(on)
5.2mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
2.5V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDD8444TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDD8444
Manufacturer:
FAIRCHILD
Quantity:
30 000
Part Number:
FDD8444
Manufacturer:
FSC进口
Quantity:
20 000
Company:
Part Number:
FDD8444L
Manufacturer:
FSC
Quantity:
2 809
Part Number:
FDD8444L
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
FDD8444 Rev B (W)
Electrical Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Notes:
1: Package current limitation is 50A.
2: Starting T
t
t
t
t
t
t
V
t
Q
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For
d(on)
d(off)
f
on
r
off
rr
Symbol
SD
rr
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
J
= 25
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovery Charge
Turn-On Time
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Turn-Off Time
o
C, L = 0.67mH, I
Parameter
a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
AS
= 40A
T
J
= 25
o
C unless otherwise noted
V
V
I
I
I
SD
SD
F
DD
GS
= 50A, dI
certification.
= 50A
= 25A
= 20V, I
= 10V, R
Test Conditions
3
F
D
/dt = 100A/μs
GS
= 50A
= 2Ω
Min
-
-
-
-
-
-
-
-
-
-
Typ
0.9
0.8
12
78
48
15
39
45
-
-
www.fairchildsemi.com
1.25
Max
135
1.0
95
51
59
-
-
-
-
Units
nC
ns
ns
ns
ns
ns
ns
ns
V