FDD8444 Fairchild Semiconductor, FDD8444 Datasheet - Page 4
![MOSFET N-CH 40V 145A DPAK](/photos/5/57/55764/fdd8444_sml.jpg)
FDD8444
Manufacturer Part Number
FDD8444
Description
MOSFET N-CH 40V 145A DPAK
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDD8444.pdf
(7 pages)
Specifications of FDD8444
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
5.2 mOhm @ 50A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
145A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
116nC @ 10V
Input Capacitance (ciss) @ Vds
6195pF @ 25V
Power - Max
153W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0094 Ohm @ 10 V
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
145 A
Power Dissipation
153000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Continuous Drain Current Id
17.5A
Drain Source Voltage Vds
40V
On Resistance Rds(on)
5.2mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
2.5V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDD8444TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDD8444
Manufacturer:
FAIRCHILD
Quantity:
30 000
Part Number:
FDD8444
Manufacturer:
FSC进口
Quantity:
20 000
Company:
Part Number:
FDD8444L
Manufacturer:
FSC
Quantity:
2 809
Part Number:
FDD8444L
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
FDD8444 Rev B (W)
Typical Characteristics
Figure 1. Normalized Power Dissipation vs Case
2000
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1000
0.01
100
0.1
10
0
2
1
10
10
-5
-5
SINGLE PULSE
V
DUTY CYCLE - DESCENDING ORDER
GS
SINGLE PULSE
D = 0.50
25
= 10V
0.20
0.10
0.05
0.02
0.01
T
C
, CASE TEMPERATURE
50
Temperature
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
Figure 3. Normalized Maximum Transient Thermal Impedance
10
10
75
-4
-4
100
125
Figure 4. Peak Current Capability
(
o
C
10
)
10
t, RECTANGULAR PULSE DURATION(s)
t, RECTANGULAR PULSE DURATION(s)
-3
150
-3
175
4
10
Figure 2. Maximum Continuous Drain Current vs
10
-2
-2
160
140
120
100
80
60
40
20
0
25
50
10
10
Case Temperature
-1
T
-1
C
NOTES:
DUTY FACTOR: D = t
PEAK T
, CASE TEMPERATURE
75
CURRENT LIMITED
BY PACKAGE
J
= P
T
FOR TEMPERATURES
ABOVE 25
CURRENT AS FOLLOWS:
C
I = I
100
DM
= 25
25
x Z
o
C
10
10
θJC
P
o
0
DM
C DERATE PEAK
1
0
125
/t
x R
175 - T
2
150
www.fairchildsemi.com
θJC
(
t
1
+ T
o
C
C
t
V
150
2
)
C
GS
= 10V
10
10
175
1
1