FDD8444 Fairchild Semiconductor, FDD8444 Datasheet - Page 4

• Manufacturer Part Number: FDD8444
• Description: MOSFET N-CH 40V 145A DPAK
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDD8444

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 5.2 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 145A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 116nC @ 10V
• Input Capacitance (ciss) @ Vds: 6195pF @ 25V
• Power - Max: 153W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0094 Ohm @ 10 V
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 145 A
• Power Dissipation: 153000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 17.5A
• Drain Source Voltage Vds: 40V
• On Resistance Rds(on): 5.2mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 2.5V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDD8444TR

FDD8444 Rev B (W)
Typical Characteristics
Figure 1. Normalized Power Dissipation vs Case
2000
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1000
0.01
100
0.1
10
0
2
1
10
10
-5
-5
SINGLE PULSE
V
DUTY CYCLE - DESCENDING ORDER
GS
SINGLE PULSE
D = 0.50
25
= 10V
0.20
0.10
0.05
0.02
0.01
T
C
, CASE TEMPERATURE
50
Temperature
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
Figure 3. Normalized Maximum Transient Thermal Impedance
10
10
75
-4
-4
100
125
Figure 4. Peak Current Capability
(
o
C
10
)
10
t, RECTANGULAR PULSE DURATION(s)
t, RECTANGULAR PULSE DURATION(s)
-3
150
-3
175
4
10
Figure 2. Maximum Continuous Drain Current vs
10
-2
-2
160
140
120
100
80
60
40
20
0
25
50
10
10
Case Temperature
-1
T
-1
C
NOTES:
DUTY FACTOR: D = t
PEAK T
, CASE TEMPERATURE
75
CURRENT LIMITED
BY PACKAGE
J
= P
T
FOR TEMPERATURES
ABOVE 25
CURRENT AS FOLLOWS:
C
I = I
100
DM
= 25
25
x Z
o
C
10
10
θJC
P
o
0
DM
C DERATE PEAK
1
0
125
/t
x R
175 - T
2
150
www.fairchildsemi.com
θJC
(
t
1
+ T
o
C
C
t
V
150
2
)
C
GS
= 10V
10
10
175
1
1