FDB20AN06A0 Fairchild Semiconductor, FDB20AN06A0 Datasheet - Page 10

• Manufacturer Part Number: FDB20AN06A0
• Description: MOSFET N-CH 60V 45A TO-263AB
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDB20AN06A0

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 20 mOhm @ 45A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 45A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 19nC @ 10V
• Input Capacitance (ciss) @ Vds: 950pF @ 25V
• Power - Max: 90W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.017 Ohms @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 45 A
• Power Dissipation: 90 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2003 Fairchild Semiconductor Corporation
PSPICE Thermal Model
REV 23 April 2003
FDP20AN06A0T
CTHERM1 TH 6 1.8e-3
CTHERM2 6 5 8.0e-3
CTHERM3 5 4 9.0e-3
CTHERM4 4 3 1.1e-2
CTHERM5 3 2 1.2e-2
CTHERM6 2 TL 2.0e-2
RTHERM1 TH 6 3.0e-2
RTHERM2 6 5 1.0e-1
RTHERM3 5 4 1.4e-1
RTHERM4 4 3 2.3e-1
RTHERM5 3 2 4.1e-1
RTHERM6 2 TL 4.2e-1
SABER Thermal Model
SABER thermal model FDP20AN06A0T
template thermal_model th tl
thermal_c th, tl
{
ctherm.ctherm1 th 6 =1.8e-3
ctherm.ctherm2 6 5 =8.0e-3
ctherm.ctherm3 5 4 =9.0e-3
ctherm.ctherm4 4 3 =1.1e-2
ctherm.ctherm5 3 2 =1.2e-2
ctherm.ctherm6 2 tl =2.0e-2
rtherm.rtherm1 th 6 =3.0e-2
rtherm.rtherm2 6 5 =1.0e-1
rtherm.rtherm3 5 4 =1.4e-1
rtherm.rtherm4 4 3 =2.3e-1
rtherm.rtherm5 3 2 =4.1e-1
rtherm.rtherm6 2 tl =4.2e-1
}
RTHERM5
RTHERM1
RTHERM2
RTHERM3
RTHERM6
RTHERM4
th
5
4
3
2
tl
6
JUNCTION
CASE
FDB20AN06A0 / FDP20AN06A0 Rev. B
CTHERM5
CTHERM2
CTHERM6
CTHERM1
CTHERM3
CTHERM4