FDB20AN06A0 Fairchild Semiconductor, FDB20AN06A0 Datasheet - Page 5

• Manufacturer Part Number: FDB20AN06A0
• Description: MOSFET N-CH 60V 45A TO-263AB
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDB20AN06A0

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 20 mOhm @ 45A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 45A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 19nC @ 10V
• Input Capacitance (ciss) @ Vds: 950pF @ 25V
• Power - Max: 90W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.017 Ohms @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 45 A
• Power Dissipation: 90 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2003 Fairchild Semiconductor Corporation
Typical Characteristics
Figure 11. Normalized Gate Threshold Voltage vs
Figure 13. Capacitance vs Drain to Source
1000
2000
100
1.2
1.0
0.8
0.6
0.4
40
0.1
-80
V
C
GS
RSS
= 0V, f = 1MHz
-40
= C
Junction Temperature
V
GD
DS
T
J
, JUNCTION TEMPERATURE (
, DRAIN TO SOURCE VOLTAGE (V)
0
Voltage
1
40
80
V
T
GS
C
C
C
= 25°C unless otherwise noted
= V
ISS
OSS
120
10
DS
= C
o
≅ C
C)
, I
GS
D
DS
= 250µA
160
+ C
+ C
GD
GD
200
60
Figure 14. Gate Charge Waveforms for Constant
Breakdown Voltage vs Junction Temperature
10
8
6
4
2
0
1.15
1.10
1.05
1.00
0.95
0.90
Figure 12. Normalized Drain to Source
0
-80
V
DD
I
D
= 30V
= 250µA
-40
3
T
J
, JUNCTION TEMPERATURE (
Gate Current
Q
0
g
, GATE CHARGE (nC)
6
40
WAVEFORMS IN
DESCENDING ORDER:
80
9
FDB20AN06A0 / FDP20AN06A0 Rev. B
I
I
D
D
= 45A
= 9A
120
o
C)
12
160
200
15