FQPF11N50CF Fairchild Semiconductor, FQPF11N50CF Datasheet - Page 3

• Manufacturer Part Number: FQPF11N50CF
• Description: MOSFET N-CH 500V 11A TO-220F
• Manufacturer: Fairchild Semiconductor
• Series: FRFET™r

Specifications of FQPF11N50CF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 550 mOhm @ 5.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 55nC @ 10V
• Input Capacitance (ciss) @ Vds: 2055pF @ 25V
• Power - Max: 48W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.55 Ohm @ 10 V
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 11 A
• Power Dissipation: 48000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FQP11N50CF/FQPF11N50CF Rev. A
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 3. On-Resistance Variation vs.
Figure 5. Capacitance Characteristics
4000
3000
2000
1000
10
10
10
-1
1
0
10
0
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
10
-1
Top :
Bottom : 4.5 V
-1
Drain Current and Gate Voltage
0
10.0 V
15.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
V
GS
V
GS
5
= 10V
V
V
DS
DS
10
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
10
10
I
0
D
C
C
C
0
, Drain Current [A]
iss
oss
rss
15
20
V
GS
= 20V
25
C
C
C
iss
oss
rss
= C
= C
= C
10
10
* Notes :
1
gs
gd
* Note : T
ds
1. 250
2. T
1
30
+ C
+ C
C
gd
= 25
gd
µ
* Note ;
(C
s Pulse Test
1. V
2. f = 1 MHz
J
ds
°
= 25
C
= shorted)
35
GS
°
= 0 V
C
40
3
Figure 2. Transfer Characteristics
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
10
10
10
12
10
10
10
8
6
4
2
0
1
0
-1
1
0
0.2
0
2
25
Variation vs. Source Current
°
150
C
0.4
°
C
150
10
4
°
and Temperatue
C
V
0.6
V
Q
GS
SD
G
25
, Gate-Source Voltage [V]
, Total Gate Charge [nC]
, Source-Drain voltage [V]
V
V
V
°
C
DS
DS
DS
20
= 250V
= 400V
= 100V
6
-55
0.8
°
C
1.0
30
8
* Notes :
1. V
2. 250
1.2
* Notes :
1. V
2. 250
DS
* Note : I
µ
= 40V
s Pulse Test
GS
40
10
µ
= 0V
s Pulse Test
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D
1.4
= 11A
1.6
12
50