FQPF11N50CF Fairchild Semiconductor, FQPF11N50CF Datasheet - Page 4

• Manufacturer Part Number: FQPF11N50CF
• Description: MOSFET N-CH 500V 11A TO-220F
• Manufacturer: Fairchild Semiconductor
• Series: FRFET™r

Specifications of FQPF11N50CF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 550 mOhm @ 5.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 55nC @ 10V
• Input Capacitance (ciss) @ Vds: 2055pF @ 25V
• Power - Max: 48W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.55 Ohm @ 10 V
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 11 A
• Power Dissipation: 48000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FQP11N50CF/FQPF11N50CF Rev. A
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
Figure 9-1. Maximum Safe Operating Area
10
10
10
10
10
-1
-2
2
1
0
10
1.2
1.1
1.0
0.9
0.8
0
-100
vs. Temperature
for FQP11N50CF
Operation in This Area
is Limited by R
-50
V
T
DS
DS(on)
J
10
, Drain-Source Voltage [V]
, Junction Temperature [
1
0
Figure 10. Maximum Drain Current vs. Case Temperature
50
DC
100 ms
* Notes :
10
100
10 ms
1. T
2. T
3. Single Pulse
2
12
10
1 ms
8
6
4
2
0
°
C
J
25
C]
= 150
= 25
* Notes :
1. V
2. I
o
C
100
o
D
C
GS
= 250
150
= 0 V
µ
s
10
µ
A
µ
50
s
200
10
T
3
J
, Junction Temperature [
(Continued)
75
4
Figure 8. On-Resistance Variation
Figure 9-2. Maximum Safe Operating Area
100
10
10
10
10
10
-1
-2
2
1
0
10
3.0
2.5
2.0
1.5
1.0
0.5
0.0
o
C]
0
-100
vs. Temperature
for FQPF11N50CF
125
Operation in This Area
is Limited by R
-50
V
DS
150
DS(on)
T
10
J
, Drain-Source Voltage [V]
, Junction Temperature [
1
0
DC
50
* Notes :
100 ms
1. T
2. T
3. Single Pulse
C
J
10
= 150
= 25
10 ms
100
2
o
o
C]
C
o
1 ms
C
* Notes :
100
1. V
2. I
www.fairchildsemi.com
150
D
GS
= 5.5 A
µ
s
= 10 V
10
µ
s
10
200
3