FDB33N25TM Fairchild Semiconductor, FDB33N25TM Datasheet

FDB33N25TM

Manufacturer Part Number

FDB33N25TM

Description

MOSFET N-CH 250V 33A D2PAK

Manufacturer

Fairchild Semiconductor

Series

UniFET™r

Datasheet

1.FDB33N25TM.pdf (9 pages)

Specifications of FDB33N25TM

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

94 mOhm @ 16.5A, 10V

Drain To Source Voltage (vdss)

250V

Current - Continuous Drain (id) @ 25° C

33A

Vgs(th) (max) @ Id

5V @ 250µA

Gate Charge (qg) @ Vgs

48nC @ 10V

Input Capacitance (ciss) @ Vds

2135pF @ 25V

Power - Max

235W

Mounting Type

Surface Mount

Package / Case

D²Pak, TO-263 (2 leads + tab)

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

0.094 Ohms @ 10 V

Drain-source Breakdown Voltage

250 V

Gate-source Breakdown Voltage

+/- 30 V

Continuous Drain Current

33 A

Power Dissipation

235 W

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

FDB33N25TMTR

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

FDB33N25TM

Manufacturer:

FSC

Quantity:

1 600

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

FDB33N25TM

Manufacturer:

NEIMICON

Quantity:

400

Company:

Meier Automation Equipment Co., Limited

Part Number:

FDB33N25TM

Manufacturer:

FAIRCHILD/仙童

Quantity:

20 000

Company:

Amily Shenzhen XNWY Technology Co., Ltd

Part Number:

FDB33N25TM

Company:

H&T Electronics

Part Number:

FDB33N25TM

Quantity:

16 000

Company:

H&T Electronics

Part Number:

FDB33N25TM

Quantity:

2 500

Current page: 1 of 9
Download datasheet (917Kb)

FDB33N25 / FDI33N25 Rev A

FDB33N25 / FDI33N25

250V N-Channel MOSFET

Features

• 33A, 250V, R

• Low gate charge ( typical 36.8 nC)

• Low C

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

Absolute Maximum Ratings

Thermal Characteristics

* When mounted on the minimum pad size recommended (PCB Mount)

dv/dt

DSS

GSS

Symbol

θJC

θJA

STG

rss

( typical 39 pF)

DS(on)

Drain-Source Voltage

Drain Current

Gate-Source voltage

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Power Dissipation

Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient*

Thermal Resistance, Junction-to-Ambient

Operating and Storage Temperature Range

= 0.094Ω @V

FDB Series

-PAK

- Continuous (T

- Pulsed

- Derate above 25°C

= 10 V

Parameter

= 25°C)

= 100°C)

Description

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary, planar

stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the avalanche

and commutation mode. These devices are well suited for high

efficient switched mode power supplies and active power factor

correction.

(Note 2)

(Note 1)

(Note 3)

(Note 1)

FDI Series

-PAK

FDB33N25 / FDI33N25

Min.

-55 to +150

20.4

23.5

1.89

250

132

±30

918

235

300

4.5

Max.

0.53

62.5

UniFET

May 2006

www.fairchildsemi.com

Unit

W/°C

V/ns

Unit

°C/W

°C

Related parts for FDB33N25TM

FDB33N25TM Summary of contents

Page 1

... Thermal Resistance, Junction-to-Ambient* θJA R Thermal Resistance, Junction-to-Ambient θJA * When mounted on the minimum pad size recommended (PCB Mount) ©2006 Fairchild Semiconductor Corporation FDB33N25 / FDI33N25 Rev A Description = 10 V These N-Channel enhancement mode power field effect GS transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology ...

Page 2

... Package Marking and Ordering Information Device Marking Device FDB33N25 FDB33N25TM FDI33N25 FDI33N25TU Electrical Characteristics Symbol Parameter Off Characteristics BV Drain-Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature DSS ΔT / Coefficient J I Zero Gate Voltage Drain Current DSS I Gate-Body Leakage Current, Forward GSSF ...

Page 3

Typical Performance Characteristics Figure 1. On-Region Characteristics Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5 Drain-Source ...

Page 4

Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature 1.2 1.1 1.0 0.9 0.8 -100 - Junction Temperature [ J Figure 9. Maximum Safe Operating Area Operation in This Area is Limited ...

Page 5

Unclamped Inductive Switching Test Circuit & Waveforms FDB33N25 / FDI33N25 Rev A Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms 5 www.fairchildsemi.com ...

Page 6

FDB33N25 / FDI33N25 Rev A Peak Diode Recovery dv/dt Test Circuit & Waveforms 6 www.fairchildsemi.com ...

Page 7

Mechanical Dimensions FDB33N25 / FDI33N25 Rev PAK 7 Dimensions in Millimeters www.fairchildsemi.com ...

Page 8

Mechanical Dimensions FDB33N25 / FDI33N25 Rev PAK 8 Dimensions in Millimeters www.fairchildsemi.com ...

Page 9

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ® ACEx™ FAST ActiveArray™ FASTr™ Bottomless™ FPS™ Build it Now™ FRFET™ CoolFET™ ...

Related keywords

fdb33n25tm
fdb33n25
FDB33N25TM datasheet
FDB33N25TM data sheet
FDB33N25TM pdf datasheet
FDB33N25TM component
FDB33N25TM part
FDB33N25TM distributor
FDB33N25TM RoHS
FDB33N25TM datasheet download