FDB33N25TM Fairchild Semiconductor, FDB33N25TM Datasheet - Page 4

• Manufacturer Part Number: FDB33N25TM
• Description: MOSFET N-CH 250V 33A D2PAK
• Manufacturer: Fairchild Semiconductor
• Series: UniFET™r

Specifications of FDB33N25TM

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 94 mOhm @ 16.5A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 33A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 48nC @ 10V
• Input Capacitance (ciss) @ Vds: 2135pF @ 25V
• Power - Max: 235W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.094 Ohms @ 10 V
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 33 A
• Power Dissipation: 235 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDB33N25TMTR

FDB33N25 / FDI33N25 Rev A
Typical Performance Characteristics
Figure 9. Maximum Safe Operating Area
Figure 7. Breakdown Voltage Variation
10
10
10
10
-1
1.2
1.1
1.0
0.9
0.8
2
1
0
10
-100
0
Operation in This Area
is Limited by R
vs. Temperature
-50
V
T
DS
J
DS(on)
, Junction Temperature [
, Drain-Source Voltage [V]
0
10
1
10
10
1 0
-1
-2
1 0
0
-5
50
DC
D =0.5
0.01
0.05
0.02
100 ms
Figure 11. Transient Thermal Response Curve
0.2
* Notes :
0.1
1. T
2. T
3. Single Pulse
10 ms
C
J
= 150
= 25
100
1 ms
o
1 0
o
C
o
C]
C
10
-4
* Notes :
100
2
1. V
2. I
t
1
D
GS
, S q uare W ave P ulse D uration [sec]
150
μ
= 250
single pulse
s
= 0 V
10
μ
A
μ
s
10
-3
200
(Continued)
4
10
-2
40
30
20
10
0
25
Figure 8. On-Resistance Variation
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Figure 10. Maximum Drain Current
-100
P
* N o te s :
DM
1 . Z
2 . D u ty F a ctor, D = t
3 . T
1 0
-1
θ
JM
JC
(t) = 0 .5 3
- T
50
t
-50
1
C
t
2
= P
vs. Case Temperature
T
D M
C
T
o
1 0
, Case Temperature [
C /W M ax.
vs. Temperature
* Z
J
, Junction Temperature [
1
0
/t
θ
0
JC
75
2
(t)
50
1 0
100
1
o
100
C]
o
C]
125
* Notes :
1. V
2. I
150
D
GS
= 16.5 A
= 10 V
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150
200