RFD16N05LSM Fairchild Semiconductor, RFD16N05LSM Datasheet

MOSFET N-CH 50V 16A TO-252AA

RFD16N05LSM

Manufacturer Part Number
RFD16N05LSM
Description
MOSFET N-CH 50V 16A TO-252AA
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of RFD16N05LSM

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
47 mOhm @ 16A, 5V
Drain To Source Voltage (vdss)
50V
Current - Continuous Drain (id) @ 25° C
16A
Vgs(th) (max) @ Id
2V @ 250mA
Gate Charge (qg) @ Vgs
80nC @ 10V
Power - Max
60W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.047 Ohm @ 5 V
Drain-source Breakdown Voltage
50 V
Gate-source Breakdown Voltage
+/- 10 V
Continuous Drain Current
16 A
Power Dissipation
60000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
RFD16N05LSM
Manufacturer:
FSC
Quantity:
4 249
Part Number:
RFD16N05LSM
Manufacturer:
FAIRCHILD
Quantity:
8 000
Part Number:
RFD16N05LSM
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Part Number:
RFD16N05LSM9A
Manufacturer:
FSC
Quantity:
21 000
Part Number:
RFD16N05LSM9A
Manufacturer:
FAIRCHILD
Quantity:
8 000
Part Number:
RFD16N05LSM9A
Manufacturer:
HAR
Quantity:
20 000
Part Number:
RFD16N05LSM9ACT
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
©2003 Fairchild Semiconductor Corporation
16A, 50V, 0.047 Ohm, Logic Level,
N-Channel Power MOSFETs
These are N-Channel logic level power MOSFETs
manufactured using the MegaFET process. This process,
which uses feature sizes approaching those of LSI
integrated circuits gives optimum utilization of silicon,
resulting in outstanding performance. They were designed
for use with logic level (5V) driving sources in applications
such as programmable controllers, automotive switching,
switching regulators, switching converters, motor relay
drivers and emitter switches for bipolar transistors. This
performance is accomplished through a special gate oxide
design which provides full rated conductance at gate biases
in the 3V to 5V range, thereby facilitating true on-off power
control directly from logic circuit supply voltages.
Formerly developmental type TA09871.
Ordering Information
NOTE: When ordering, include the entire part number. Add the suffix 9A
to obtain the TO-252AA variant in tape and reel, i.e. RFD16N05LSM9A
Packaging
RFD16N05L
RFD16N05LSM
PART NUMBER
DRAIN (FLANGE)
JEDEC TO-251AA
TO-251AA
TO-252AA
PACKAGE
Data Sheet
SOURCE
DRAIN
RFD16N05L
RFD16N05LSM
GATE
BRAND
Features
• 16A, 50V
• r
• UIS SOA Rating Curve (Single Pulse)
• Design Optimized for 5V Gate Drives
• Can be Driven Directly from CMOS, NMOS, TTL Circuits
• Compatible with Automotive Drive Requirements
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
Symbol
- TB334 “Guidelines for Soldering Surface Mount
DS(ON)
Components to PC Boards”
RFD16N05L, RFD16N05LSM
December 2003
= 0.047
SOURCE
GATE
JEDEC TO-252AA
G
DRAIN (FLANGE)
D
S
RFD16N05L, RFD16N05LSM Rev. B1

Related parts for RFD16N05LSM

RFD16N05LSM Summary of contents

Page 1

... PART NUMBER PACKAGE RFD16N05L TO-251AA RFD16N05LSM TO-252AA NOTE: When ordering, include the entire part number. Add the suffix 9A to obtain the TO-252AA variant in tape and reel, i.e. RFD16N05LSM9A Packaging JEDEC TO-251AA DRAIN (FLANGE) ©2003 Fairchild Semiconductor Corporation RFD16N05L, RFD16N05LSM December 2003 Features • ...

Page 2

... RFD16N05L, RFD16N05LSM DGR 0. -55 to 150 J STG 300 L 260 pkg MIN TYP = 0V, Figure 250mA, Figure 150 8A 12 40V 16A 2.5 L Figures 17 MIN TYP - - /dt = 100A RFD16N05L, RFD16N05LSM Rev. B1 UNITS MAX UNITS - 100 nA 0.047 0.056 100 2.083 C/W o 100 C/W MAX UNITS 1.5 V 125 ns ...

Page 3

... (L)(I )/(1.3 RATED DSS (L/R)ln[(I *R)/(1.3 RATED DSS 1 0.01 0. TIME IN AVALANCHE (ms) AV (SINGLE PULSE UIS SOA 15V DS PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 1.5 3 GATE TO SOURCE VOLTAGE (V) GS FIGURE 6. TRANSFER CHARACTERISTICS RFD16N05L, RFD16N05LSM Rev. B1 125 150 + 4.5 6.0 ...

Page 4

... G(REF) PLATEAU VOLTAGES IN DESCENDING ORDER DSS DSS DSS DSS DSS 25 GATE SOURCE VOLTAGE DRAIN SOURCE VOLTAGE REF I G REF 20 ------------------------ - t, TIME ( s) 80 ------------------------ - I G ACT I G ACT CONSTANT GATE CURRENT RFD16N05L, RFD16N05LSM Rev. B1 150 200 o C) 150 200 DSS ...

Page 5

... DUT V GS 10% 0 FIGURE 16. RESISTIVE SWITCHING WAVEFORMS V DS (ISOLATED SUPPLY SAME TYPE AS DUT D DUT CURRENT D SAMPLING RESISTOR 0 BV DSS FIGURE 14. UNCLAMPED ENERGY WAVEFORMS d(ON) d(OFF 90% 10% 50% PULSE WIDTH Q g(TOT G(REF) FIGURE 18. GATE CHARGE WAVEFORMS RFD16N05L, RFD16N05LSM Rev OFF t f 90% 10% 90% 50 ...

Page 6

... Temperature Options; written by William J. Hepp and C. Frank Wheatley. ©2003 Fairchild Semiconductor Corporation DPLCAP 10 RSCL2 - 6 ESG 8 + VTO EVTO GATE + LGATE RGATE RIN S1A S2A S1B S2B EGS LDRAIN RSCL1 DBREAK ESCL RDRAIN EBREAK MOS2 21 MOS1 CIN LSOURCE RSOURCE 8 7 RBREAK EDS 8 - RFD16N05L, RFD16N05LSM Rev. B1 DRAIN 2 DBODY 3 SOURCE 18 RVTO 19 VBAT + ...

Page 7

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ActiveArray™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ ...

Related keywords