RFD16N05LSM Fairchild Semiconductor, RFD16N05LSM Datasheet - Page 2
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RFD16N05LSM
Manufacturer Part Number
RFD16N05LSM
Description
MOSFET N-CH 50V 16A TO-252AA
Manufacturer
Fairchild Semiconductor
Datasheet
1.RFD16N05LSM9A.pdf
(7 pages)
Specifications of RFD16N05LSM
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
47 mOhm @ 16A, 5V
Drain To Source Voltage (vdss)
50V
Current - Continuous Drain (id) @ 25° C
16A
Vgs(th) (max) @ Id
2V @ 250mA
Gate Charge (qg) @ Vgs
80nC @ 10V
Power - Max
60W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.047 Ohm @ 5 V
Drain-source Breakdown Voltage
50 V
Gate-source Breakdown Voltage
+/- 10 V
Continuous Drain Current
16 A
Power Dissipation
60000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
RFD16N05LSM
Manufacturer:
FSC
Quantity:
4 249
Part Number:
RFD16N05LSM
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
RFD16N05LSM9A
Manufacturer:
FSC
Quantity:
21 000
Part Number:
RFD16N05LSM9A
Manufacturer:
HAR
Quantity:
20 000
Part Number:
RFD16N05LSM9ACT
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Absolute Maximum Ratings
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain to Gate Voltage (R
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Maximum Temperature for Soldering
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
Electrical Specifications
Source to Drain Diode Specifications
NOTES:
©2003 Fairchild Semiconductor Corporation
Drain to Source Breakdown Voltage
Gate to Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate Charge at 5V
Threshold Gate Charge
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
Source to Drain Diode Voltage
Diode Reverse Recovery Time
Derate Above 25
1. T
2. Pulse Test: Pulse Width 300ms, Duty Cycle 2%.
3. Repetitive Rating: Pulse Width limited by max junction temperature.
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
= 25
o
C to 125
PARAMETER
o
PARAMETER
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
o
C.
GS
= 20k ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
T
C
= 25
T
C
= 25
o
C, Unless Otherwise Specified
o
C, Unless Otherwise Specified
SYMBOL
SYMBOL
V
Q
r
BV
t
Q
V
DS(ON)
t
d(OFF)
t
GS(TH)
Q
R
I
t
d(ON)
R
I
(OFF)
g(TOT)
t
GSS
(ON)
SD
DSS
g(TH)
rr
g(5)
t
DSS
t
r
f
JC
JA
I
I
V
V
V
I
I
V
V
Figures 15, 16
V
V
V
SD
I
SD
D
D
D
GS
DS
GS
DD
GS =
GS
GS
GS
= 250mA, V
= 16A, V
= 16A, V
= 16A
= 16A, dI
= V
= 10V, V
= 40V, V
= 25V, I
= 0V to 10V
= 0V to 5V
= 0V to 1V
5V, R
DS
TEST CONDITIONS
TEST CONDITIONS
, I
GS
GS
GS
D
D
SD
GS
GS
DS
= 5V
= 4V
= 8A,
= 250mA, Figure 9
= 12.5
/dt = 100A/ s
J
= 0V
, T
= 0V
= 0V, Figure 10
DGR
STG
pkg
T
V
I
R
Figures 17, 18
DM
GS
DS
D
C
DD
L
D
D
L
= 16A,
= 2.5
= 150
= 40V,
o
C
RFD16N05LSM
RFD16N05L,
MIN
-55 to 150
50
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MIN
0.48
-
-
300
260
50
50
16
45
60
10
RFD16N05L, RFD16N05LSM Rev. B1
TYP
14
30
42
14
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP
-
-
0.047
0.056
2.083
MAX
100
100
100
MAX
50
60
80
45
125
2
1
3
1.5
-
-
-
-
-
UNITS
W/
UNITS
UNITS
o
o
o
W
o
o
V
V
A
A
V
C
C
C
o
C/W
C/W
nC
nC
nC
nA
ns
ns
ns
ns
ns
ns
ns
C
V
V
V
A
A