FDP65N06 Fairchild Semiconductor, FDP65N06 Datasheet - Page 3

• Manufacturer Part Number: FDP65N06
• Description: MOSFET N-CH 60V 65A TO-220
• Manufacturer: Fairchild Semiconductor
• Series: UniFET™r

Specifications of FDP65N06

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 16 mOhm @ 32.5A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 65A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 43nC @ 10V
• Input Capacitance (ciss) @ Vds: 2170pF @ 25V
• Power - Max: 135W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.016 Ohms
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 65 A
• Power Dissipation: 135 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDP65N06 Rev. A1
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 3. On-Resistance Variation vs.
Figure 5. Capacitance Characteristics
100
4000
3000
2000
1000
300
10
2
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0
10
0.1
-1
0
Top :
B ottom :
Drain Current and Gate Voltage
10.0 V
15.0 V
C
C
C
5 .5 V
8.0 V
7.0 V
6.5 V
6.0 V
V
oss
iss
rss
G S
V
D S
5
V
, D rain-S ource V oltage [V ]
DS
V
GS
, Drain-Source Voltage [V]
= 10V
10
I
1
D
, Drain Current [A]
0
* N otes :
10
1. 250
2. T
C
= 25
µ
C
C
C
V
s Pulse Test
iss
oss
rss
GS
= C
= C
o
= C
= 20V
C
gs
gd
ds
10
* Note : T
15
+ C
+ C
1
* Note :
gd
gd
1. V
2. f = 1 MHz
(C
ds
GS
J
= shorted)
= 25
= 0 V
10
o
C
20
3
Figure 2. Transfer Characteristics
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
100
1 0 0
10
5 0 0
12
10
1 0
1
0.2
8
6
4
2
0
1
0
2
Variation vs. Source Current
and Temperatue
1 5 0
2 5
0.4
150
o
o
C
C
0
C
V
10
V
G S
4
DS
, G a te -S o urc e V o lta ge [V ]
Q
25
0.6
, Source-Drain Violtage [V]
G
0
C
, Total Gate Charge [nC]
V
V
V
DS
DS
DS
= 48V
= 12V
= 30V
0.8
-5 5
6
20
o
* Note :
1. V
2. 250
C
GS
* N o te s :
=0V
µ
s Pulse Test
1 . V
2 . 2 5 0
1.0
D S
µ
= 4 0 V
s P u ls e T e s t
8
* Note : I
30
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1.2
D
= 65A
1.4
1 0
40