FDP65N06 Fairchild Semiconductor, FDP65N06 Datasheet - Page 5

• Manufacturer Part Number: FDP65N06
• Description: MOSFET N-CH 60V 65A TO-220
• Manufacturer: Fairchild Semiconductor
• Series: UniFET™r

Specifications of FDP65N06

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 16 mOhm @ 32.5A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 65A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 43nC @ 10V
• Input Capacitance (ciss) @ Vds: 2170pF @ 25V
• Power - Max: 135W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.016 Ohms
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 65 A
• Power Dissipation: 135 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
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FDP65N06 Rev. A1