FDP12N50 Fairchild Semiconductor, FDP12N50 Datasheet - Page 2
![MOSFET N-CH 500V 11.5A TO-220](/photos/5/30/53099/261-to-220-3_sml.jpg)
FDP12N50
Manufacturer Part Number
FDP12N50
Description
MOSFET N-CH 500V 11.5A TO-220
Manufacturer
Fairchild Semiconductor
Series
UniFET™r
Datasheet
1.FDPF12N50T.pdf
(10 pages)
Specifications of FDP12N50
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
650 mOhm @ 6A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
11.5A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
30nC @ 10V
Input Capacitance (ciss) @ Vds
1315pF @ 25V
Power - Max
165W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.55 Ohms
Forward Transconductance Gfs (max / Min)
11.5 S
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
6.9 A
Power Dissipation
165 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDP12N50
Manufacturer:
Fairchild Semiconductor
Quantity:
1 895
Company:
Part Number:
FDP12N50
Manufacturer:
Fairchi/ON
Quantity:
17 384
Part Number:
FDP12N50
Manufacturer:
ON/安森美
Quantity:
20 000
Company:
Part Number:
FDP12N50NZ
Manufacturer:
Fairchi/ON
Quantity:
17 391
Part Number:
FDP12N50NZ
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
FDP12N50 / FDPF12N50 Rev. A
Package Marking and Ordering Information
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 6.9mH, I
3. I
4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
BV
ΔBV
/
I
I
V
R
g
C
C
C
Q
Q
Q
t
t
t
t
I
I
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
FS
GS(th)
SD
DS(on)
iss
oss
rss
g
gs
gd
rr
SD
Device Marking
DSS
Symbol
ΔT
≤ 11.5A, di/dt ≤ 200A/μs, V
DSS
FDPF12N50
FDP12N50
J
AS
= 11.5A, V
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
Drain to Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
DD
= 50V, R
DD
≤ BV
FDPF12N50
FDP12N50
G
Device
DSS
= 25Ω, Starting T
Parameter
, Starting T
J
= 25°C
J
= 25°C
Package
TO-220F
TO-220
I
I
V
V
V
V
V
dI
V
V
V
V
f = 1MHz
V
V
V
R
D
D
DS
DS
GS
DD
GS
GS
GS
GS
DS
DS
DS
GS
G
F
= 250μA, V
= 250μA, Referenced to 25
/dt = 100A/μs
= 25Ω
= 500V, V
= 400V, T
= 0V, I
= ±30V, V
= 40V, I
= 25V, V
= 400V, I
= 250V, I
= 0V, I
= V
= 10V, I
= 10V
DS
T
Test Conditions
, I
C
SD
2
SD
D
Reel Size
D
= 25
D
GS
GS
D
D
= 6A
= 11.5A
= 11.5A
GS
C
= 6A
DS
= 250μA
= 11.5A
= 11.5A
= 125
= 0V
= 0V, T
o
-
-
= 0V
= 0V
C unless otherwise noted
o
C
J
= 25
(Note 4, 5)
(Note 4, 5)
o
(Note 4)
(Note 4)
o
C
C
Tape Width
-
-
Min.
500
3.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
0.55
11.5
375
985
140
3.5
0.5
24
50
45
30
11
22
6
9
-
-
-
-
-
-
-
-
Quantity
www.fairchildsemi.com
Max.
±100
1315
0.65
11.5
190
110
100
1.4
5.0
60
70
10
17
30
46
1
50
50
-
-
-
-
-
-
-
Units
V/
nC
nC
nC
μA
pF
pF
pF
nA
ns
ns
ns
ns
ns
μC
V
Ω
A
A
V
V
S
o
C