FDP12N50 Fairchild Semiconductor, FDP12N50 Datasheet - Page 5
![MOSFET N-CH 500V 11.5A TO-220](/photos/5/30/53099/261-to-220-3_sml.jpg)
FDP12N50
Manufacturer Part Number
FDP12N50
Description
MOSFET N-CH 500V 11.5A TO-220
Manufacturer
Fairchild Semiconductor
Series
UniFET™r
Datasheet
1.FDPF12N50T.pdf
(10 pages)
Specifications of FDP12N50
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
650 mOhm @ 6A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
11.5A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
30nC @ 10V
Input Capacitance (ciss) @ Vds
1315pF @ 25V
Power - Max
165W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.55 Ohms
Forward Transconductance Gfs (max / Min)
11.5 S
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
6.9 A
Power Dissipation
165 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDP12N50
Manufacturer:
Fairchild Semiconductor
Quantity:
1 895
Company:
Part Number:
FDP12N50
Manufacturer:
Fairchi/ON
Quantity:
17 384
Part Number:
FDP12N50
Manufacturer:
ON/安森美
Quantity:
20 000
Company:
Part Number:
FDP12N50NZ
Manufacturer:
Fairchi/ON
Quantity:
17 391
Part Number:
FDP12N50NZ
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
FDP12N50 / FDPF12N50 Rev. A
Typical Performance Characteristics
1E-3
0.01
0.1
0.01
3
1
0.1
Figure 11-1. Transient Thermal Response Curve - FDP12N50
Figure 11-2. Transient Thermal Response Curve - FDPF12N50
10
1
5
10
0.01
Single pulse
0.5
0.05
0.02
0.2
-5
0.1
0.5
0.05
0.02
0.01
0.2
-4
0.1
Single pulse
10
10
-3
-4
10
Rectangular Pulse Duration [sec]
10
Rectangular Pulse Duration [sec]
-2
-3
(Continued)
10
-1
10
-2
5
10
0
10
*Notes:
-1
P
1. Z
2. Duty Factor, D=t
3. T
* Notes :
DM
P
1. Z
2. Duty Factor, D=t
3. T
10
θ
DM
JM
JC
θ
JM
1
- T
JC
(t) = 0.75
- T
(t) = 3
C
t
= P
1
C
10
t
t
= P
2
1
DM
t
o
0
2
o
C/W Max.
C/W Max.
DM
10
* Z
1
2
* Z
/t
θ
1
2
JC
/t
θ
2
JC
(t)
(t)
10
10
1
3
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