FDPF5N50NZ Fairchild Semiconductor, FDPF5N50NZ Datasheet

MOSFET N-CH 500V 4.5A TO220F

FDPF5N50NZ

Manufacturer Part Number
FDPF5N50NZ
Description
MOSFET N-CH 500V 4.5A TO220F
Manufacturer
Fairchild Semiconductor
Series
UniFET-II™r
Datasheet

Specifications of FDPF5N50NZ

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.5 Ohm @ 2.25A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
4.5A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
12nC @ 10V
Input Capacitance (ciss) @ Vds
440pF @ 25V
Power - Max
30W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.38 Ohms
Forward Transconductance Gfs (max / Min)
3.54 S
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
25 V
Continuous Drain Current
4.5 A
Power Dissipation
30 W
Maximum Operating Temperature
+ 125 C
Mounting Style
Through Hole
Gate Charge Qg
9 nC
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
©2010 Fairchild Semiconductor Corporation
FDP5N50NZ / FDPF5N50NZ Rev. A
MOSFET Maximum Ratings
*Drain current limited by maximum junction temperature
Thermal Characteristics
V
V
I
I
E
I
E
dv/dt
P
T
T
R
R
R
FDP5N50NZ / FDPF5N50NZ
N-Channel MOSFET
500V, 4.5A, 1.5
Features
• R
• Low Gate Charge (Typ. 9nC)
• Low C
• Fast Switching
• 100% Avalanche Tested
• Improved dv/dt Capability
• ESD Imoroved Capability
• RoHS Compliant
D
DM
AR
J
L
DSS
GSS
AS
AR
D
JC
CS
JA
, T
Symbol
Symbol
DS(on)
STG
rss
= 1.38 (Typ.)@ V
(Typ. 4pF)
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Sink Typ.
Thermal Resistance, Junction to Ambient
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
TO-220
FDP Series
GS
= 10V, I
D
= 2.25A
T
C
= 25
Parameter
Parameter
-Continuous (T
-Continuous (T
- Pulsed
(T
- Derate above 25
G
o
C
C unless otherwise noted*
D
= 25
S
o
C)
C
C
= 25
= 100
1
TO-220F
FDPF Series
(potted)
o
C
Description
These N-Channel enhancement mode power field effect transis
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advance technology has been especially tailored to mini
mize on-state resistance, provide superior switching perfor
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi
cient switching mode power supplies and active power factor
correction.
o
C)
o
C)
(Note 1)
(Note 2)
(Note 3)
(Note 1)
(Note 1)
FDP5N50NZ
FDP5N50NZ
62.5
0.62
G
G
1.6
4.5
2.7
18
78
-
-55 to +150
500
±25
160
300
4.5
7.8
10
FDPF5N50NZ
FDPF5N50NZ
UniFET-II
March 2010
D
D
S
S
62.5
0.24
4.5*
2.7*
4.1
18*
30
-
www.fairchildsemi.com
Units
Units
o
W/
V/ns
C/W
mJ
mJ
o
o
W
V
V
A
A
A
C
C
o
C
tm
TM

Related parts for FDPF5N50NZ

FDPF5N50NZ Summary of contents

Page 1

... R Thermal Resistance, Case to Sink Typ. CS R Thermal Resistance, Junction to Ambient JA ©2010 Fairchild Semiconductor Corporation FDP5N50NZ / FDPF5N50NZ Rev. A Description = 2.25A These N-Channel enhancement mode power field effect transis D tors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to mini ...

Page 2

... Starting 2.8A, di/dt  200A/s, V  Starting DSS 4. Pulse Test: Pulse Width  300 s, Duty cycle  2.0% 5. Essentially Independent of Operating Temperature Typical Characteristics FDP5N50NZ / FDPF5N50NZ Rev. A Package Reel Size TO-220 - TO-220F - unless otherwise noted C Test Conditions I = 250 ...

Page 3

... Drain Current [A] D Figure 5. Capacitance Characteristics 600 C iss = oss = oss 500 C rss = iss 400 300 200 C rss 100 0 0 Drain-Source Voltage [V] DS FDP5N50NZ / FDPF5N50NZ Rev. A Figure 2. Transfer Characteristics *Notes:  1. 250 s Pulse Test Figure 4. Body Diode Forward Voltage V = 10V 20V GS o *Notes ...

Page 4

... Operation in This Area is Limited by R DS(on) 0.1 *Notes Single Pulse 0. Drain-Source Voltage [V] DS Figure 11. Maximum Drain Current Case Temperature [ C FDP5N50NZ / FDPF5N50NZ Rev. A (Continued) Figure 8. On-Resistance Variation *Notes  250 100 150 Figure 10. Maximum Safe Operating Area  100 s 1ms 10ms 150 ...

Page 5

... Typical Performance Characteristics Figure 12. Transient Thermal Response Curve-FDP5N50NZ 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 Single pulse 0. Figure 13. Transient Thermal Response Curve-FDPF5N50NZ 5 0.5 1 0.2 0.1 0.05 0.02 0.1 0.01 Single pulse 0. FDP5N50NZ / FDPF5N50NZ Rev. A (Continued Rectangular Pulse Duration [sec Rectangular Pulse Duration [sec] ...

Page 6

... FDP5N50NZ / FDPF5N50NZ Rev. A Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 6 www.fairchildsemi.com ...

Page 7

... FDP5N50NZ / FDPF5N50NZ Rev. A Peak Diode Recovery dv/dt Test Circuit & Waveforms + + • • • I • www.fairchildsemi.com ...

Page 8

... Package Dimensions FDP5N50NZ / FDPF5N50NZT Rev. A TO-220 8 www.fairchildsemi.com ...

Page 9

... Package Dimensions * Front/Back Side Isolation Voltage : AC2500V FDP5N50NZ / FDPF5N50NZ Rev. A TO-220F 9 Dimensions in Millimeters www.fairchildsemi.com ...

Page 10

... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDP5N50NZ / FDPF5N50NZ Rev. A FPS™ PowerTrench F-PFS™ PowerXS™ ® FRFET Programmable Active Droop™ SM ® Global Power Resource QFET Green FPS™ ...

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