FDPF13N50FT Fairchild Semiconductor, FDPF13N50FT Datasheet

MOSFET N-CH 500V 12A TO-220F

FDPF13N50FT

Manufacturer Part Number
FDPF13N50FT
Description
MOSFET N-CH 500V 12A TO-220F
Manufacturer
Fairchild Semiconductor
Series
UniFET™r
Datasheet

Specifications of FDPF13N50FT

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
540 mOhm @ 6A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
12A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
39nC @ 10V
Input Capacitance (ciss) @ Vds
1930pF @ 25V
Power - Max
42W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.54 Ohm @ 10 V
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
12 A
Power Dissipation
42000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
©2007 Fairchild Semiconductor Corporation
FDP13N50F / FDPF13N50FT Rev. A
MOSFET Maximum Ratings
Thermal Characteristics
*Drain current limited by maximum junction temperature
V
V
I
I
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
FDP13N50F / FDPF13N50FT
N-Channel MOSFET
500V, 12A, 0.54Ω
Features
• R
• Low gate charge ( Typ. 30nC)
• Low C
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant
J
L
DSS
GSS
AS
AR
D
θJC
θCS
θJA
, T
Symbol
Symbol
STG
DS(on)
G
rss
D
= 0.42Ω ( Typ.)@ V
S
( Typ. 14.5pF)
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Sink Typ.
Thermal Resistance, Junction to Ambient
FDP Series
TO-220
GS
= 10V, I
D
= 6A
T
C
= 25
Parameter
Parameter
-Continuous (T
-Continuous (T
- Pulsed
(T
- Derate above 25
G
C
o
D
C unless otherwise noted*
= 25
S
o
C)
C
C
= 25
= 100
TO-220F
FDPF Series
1
o
C
o
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
C)
o
C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
G
FDP13N50F FDPF13N50FT
FDP13N50F FDPF13N50FT
1.53
0.65
62.5
195
7.2
0.5
12
48
S
D
-55 to +150
19.5
500
±30
684
300
4.5
12
September 2007
UniFET
62.5
0.33
7.2*
3.0
12*
48*
42
-
www.fairchildsemi.com
switching
Units
Units
W/
o
V/ns
C/W
mJ
mJ
o
o
W
V
V
A
A
A
C
C
o
C
TM
tm

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FDPF13N50FT Summary of contents

Page 1

... R Thermal Resistance, Case to Sink Typ. θCS R Thermal Resistance, Junction to Ambient θJA ©2007 Fairchild Semiconductor Corporation FDP13N50F / FDPF13N50FT Rev. A Description = 6A These N-Channel enhancement mode power field effect D transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to ...

Page 2

... Starting ≤ 12A, di/dt ≤ 200A/µs, V ≤ Starting DSS 4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ Essentially Independent of Operating Temperature Typical Characteristics FDP13N50F / FDPF13N50FT Rev unless otherwise noted C Package Reel Size TO-220 - TO-220F - Test Conditions I = 250µ ...

Page 3

... I , Drain Current [A] D Figure 5. Capacitance Characteristics 3000 C iss = oss C oss = rss = iss 1500 C rss 0 0 Drain-Source Voltage [V] DS FDP13N50F / FDPF13N50FT Rev. Figure 2. Transfer Characteristics *Notes: 1. 250 µ s Pulse Test Figure 4. Body Diode Forward Voltage 100 V = 20V GS o *Note Figure 6. Gate Charge Characteristics ...

Page 4

... T , Junction Temperature J Figure 9. Maximum Drain Current vs. Case Temperature Case Temperature C Figure 10. Transient Thermal Response Curve - FDPF13N50FT 5 0.5 1 0.2 0.1 0.05 0.1 0.02 0.01 Single pulse 0. FDP13N50F / FDPF13N50FT Rev. (Continued) Figure 8. Maximum Safe Operating Area 100 0.1 *Notes µ ...

Page 5

... FDP13N50F / FDPF13N50FT Rev. Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 5 www.fairchildsemi.com ...

Page 6

... FDP13N50F / FDPF13N50FT Rev. Peak Diode Recovery dv/dt Test Circuit & Waveforms + + • • • I • www.fairchildsemi.com ...

Page 7

... Mechanical Dimensions 9.90 ø3.60 ±0.10 1.27 2.54TYP ±0.20 [2.54 ] 10.00 FDP13N50F / FDPF13N50FT Rev. TO-220 ±0.20 (8.70) ±0.10 ±0.10 1.52 ±0.10 0.80 2.54TYP ±0.20 [2.54 ] ±0.20 7 ±0.20 4.50 +0.10 1.30 –0.05 +0.10 0.50 ±0.20 2.40 –0.05 www.fairchildsemi.com ...

Page 8

... Mechanical Dimensions 10.16 MAX1.47 0.80 ±0.10 0.35 ±0.10 2.54TYP ±0.20 [2.54 ] 9.40 FDP13N50F / FDPF13N50FT Rev. TO-220F ±0.20 ±0.10 ø3.18 (7.00) (1.00x45°) #1 2.54TYP ±0.20 [2.54 ] ±0.20 8 ±0.20 2.54 (0.70) +0.10 0.50 ±0.20 2.76 –0.05 Dimensions in Millimeters www.fairchildsemi.com ...

Page 9

... Datasheet Identification Product Status Advance Information Formative or In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDP13N50F / FDPF13N50FT Rev. Green FPS™ Power247 Green FPS™ e-Series™ POWEREDGE GTO™ Power-SPM™ i-Lo™ PowerTrench IntelliMAX™ ...

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