FDPF20N50T Fairchild Semiconductor, FDPF20N50T Datasheet - Page 4
![MOSFET N-CH 500V 20A TO-220F](/photos/5/31/53149/mfg_to-220f_desc_sml.jpg)
FDPF20N50T
Manufacturer Part Number
FDPF20N50T
Description
MOSFET N-CH 500V 20A TO-220F
Manufacturer
Fairchild Semiconductor
Series
UniFET™r
Datasheet
1.FDPF20N50.pdf
(10 pages)
Specifications of FDPF20N50T
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
230 mOhm @ 10A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
20A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
59.5nC @ 10V
Input Capacitance (ciss) @ Vds
3120pF @ 25V
Power - Max
38.5W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.23 Ohms
Forward Transconductance Gfs (max / Min)
24.6 S
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
20 A
Power Dissipation
38.5 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDPF20N50T
Manufacturer:
FAIRCHILD
Quantity:
12 500
Company:
Part Number:
FDPF20N50T
Manufacturer:
Fairchi/ON
Quantity:
17 414
FDP20N50 / FDPF20N50 Rev. C
Typical Performance Characteristics
Figure 10. Maximum Drain Currentvs. Case Temperature
Figure 9-1. Maximum Safe Operating Area
Figure 7. Breakdown Voltage Variation
10
10
10
10
10
25
20
15
10
1.2
1.1
1.0
0.9
0.8
5
0
-1
-2
2
1
0
25
10
-100
0
- FDP20N50
-50
vs. Temperature
50
Operation in This Area
is Limited by R
T
V
J
T
, Junction Temperature [
DS
C
, Case Temperature [
0
, Drain-Source Voltage [V]
10
DS(on)
1
75
50
100
100
o
100 ms
C]
o
C]
* Notes :
DC
10 ms
10
* Notes :
1. T
2. T
3. Single Pulse
1. V
2. I
2
C
J
D
1 ms
GS
= 150
= 25
125
= 250
150
= 0 V
100
o
C
o
μ
C
A
μ
s
10
(Continued)
200
μ
s
150
4
10
10
10
10
10
-1
-2
2
1
0
10
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Figure 9-2. Maximum Safe Operating Area
Figure 8. On-Resistance Variation
-100
0
Operation in This Area
is Limited by R
-50
V
- FDPF20N50
DS(on)
DS
T
vs. Temperature
, Drain-Source Voltage [V]
J
10
, Junction Temperature [
1
0
50
DC
100 ms
* Notes :
10 ms
1. T
2. T
3. Single Pulse
100
10
C
J
1 ms
= 150
= 25
2
o
C]
100
o
C
o
C
10
μ
* Notes :
s
1. V
2. I
150
μ
s
D
www.fairchildsemi.com
GS
= 10 A
= 10 V
200