FDPF20N50T Fairchild Semiconductor, FDPF20N50T Datasheet - Page 5

• Manufacturer Part Number: FDPF20N50T
• Description: MOSFET N-CH 500V 20A TO-220F
• Manufacturer: Fairchild Semiconductor
• Series: UniFET™r

Specifications of FDPF20N50T

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 230 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 59.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 3120pF @ 25V
• Power - Max: 38.5W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.23 Ohms
• Forward Transconductance Gfs (max / Min): 24.6 S
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 20 A
• Power Dissipation: 38.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDP20N50 / FDPF20N50 Rev. C
Typical Performance Characteristics
Figure 11-1. Transient Thermal Response Curve - FDP20N50
Figure 11-2. Transient Thermal Response Curve - FDPF20N50
1 0
1 0
1 0
1 0
1 0
1 0
- 1
- 2
-1
-2
0
1 0
1 0
0
-5
-5
D = 0 . 5
D = 0 .5
0 .0 1
0 . 0 5
0 . 0 5
0 .0 2
0 . 0 1
0 . 0 2
0 .1
0 . 2
0 .1
0 .2
1 0
1 0
s in g le p u ls e
- 4
-4
t
t
1
1
s in g le p u ls e
, S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
, S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
1 0
1 0
-3
-3
(Continued)
5
1 0
1 0
-2
- 2
* N o t e s :
* N o t e s :
1 . Z
2 . D u t y F a c t o r , D = t
3 . T
1 . Z
2 . D u t y F a c t o r , D = t
3 . T
1 0
1 0
P
DM
P
- 1
-1
θ
J M
θ
J M
DM
J C
J C
( t ) = 3 . 3
- T
( t ) = 0 . 5
- T
C
C
= P
= P
t
1
t
t
1
2
o
D M
D M
t
o
2
C / W M a x .
C / W M a x .
1 0
1 0
* Z
* Z
0
0
θ
θ
1
J C
1
J C
/ t
/t
( t )
( t )
2
2
1 0
1 0
1
1
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