FDA59N30 Fairchild Semiconductor, FDA59N30 Datasheet - Page 2
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FDA59N30
Manufacturer Part Number
FDA59N30
Description
MOSFET N-CH 300V 59A TO-3P
Manufacturer
Fairchild Semiconductor
Series
UniFET™r
Datasheet
1.FDA59N30.pdf
(8 pages)
Specifications of FDA59N30
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
56 mOhm @ 29.5A, 10V
Drain To Source Voltage (vdss)
300V
Current - Continuous Drain (id) @ 25° C
59A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
100nC @ 10V
Input Capacitance (ciss) @ Vds
4670pF @ 25V
Power - Max
500W
Mounting Type
Through Hole
Package / Case
TO-3PN-3
Transistor Polarity
N Channel
Continuous Drain Current Id
59A
Drain Source Voltage Vds
300V
On Resistance Rds(on)
56mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
5V
Rohs Compliant
Yes
Configuration
Single
Resistance Drain-source Rds (on)
0.056 Ohms
Drain-source Breakdown Voltage
300 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
59 A
Power Dissipation
500 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDA59N30
Manufacturer:
IDT
Quantity:
1 430
Part Number:
FDA59N30
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
FDA59N30LDTU
Manufacturer:
SAMSUNG
Quantity:
3 023
FDA59N30 Rev. A
Package Marking and Ordering Information
Electrical Characteristics
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 0.83mH, I
3. I
4. Pulse Test: Pulse width
5. Essentially Independent of Operating Temperature Typical Characteristics
Off Characteristics
BV
/
I
I
I
On Characteristics
V
R
g
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
Q
Q
Q
Drain-Source Diode Characteristics and Maximum Ratings
I
I
V
t
Q
Device Marking
Symbol
DSS
GSSF
GSSR
d(on)
r
d(off)
f
S
SM
rr
BV
FS
GS(th)
SD
SD
DS(on)
iss
oss
rss
g
gs
gd
rr
DSS
DSS
FDA59N30
T
59A, di/dt
J
AS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
= 59A, V
200A/ s, V
DD
300 s, Duty Cycle
= 50V, R
DD
Parameter
BV
FDA59N30
Device
DSS
G
= 25 , Starting T
, Starting T
2%
J
= 25 C
T
C
J
= 25°C unless otherwise noted
= 25 C
Package
TO-3PN
V
V
I
V
V
V
V
V
V
V
f = 1.0MHz
V
R
V
V
V
V
dI
D
GS
DS
DS
GS
GS
DS
GS
DS
DS
DD
DS
GS
GS
GS
G
F
= 250 A, Referenced to 25 C
/dt =100A/ s
= 25
= 300V, V
= 240V, T
= V
= 40V, I
= 25V, V
= 240V, I
= 0V, I
= 30V, V
= -30V, V
= 10V, I
= 150V, I
= 10V
= 0V, I
= 0V, I
GS
2
, I
D
S
S
D
D
D
Conditions
= 59A
= 59A
= 250 A
DS
GS
D
D
DS
C
= 29.5A
GS
= 29.5A
= 250 A
= 59A
= 59A
Reel Size
= 125 C
= 0V
= 0V,
= 0V
= 0V
-
(Note 4, 5)
(Note 4, 5)
(Note 4)
(Note 4)
Tape Width
Min.
300
3.0
-
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Typ.
0.047
3590
710
140
575
120
200
246
0.3
6.9
22
40
52
80
77
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Quantity
Max Units
0.056
4670
1160
-100
www.fairchildsemi.com
100
920
120
290
250
410
100
236
5.0
1.4
10
59
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1
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30
V/ C
nC
nC
nC
nA
nA
pF
pF
pF
ns
ns
ns
ns
ns
V
V
S
A
A
V
A
A
C